Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors
Huang, Xinnan, Yao, Yao, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Jin, Zhi
Published in Materials (28.06.2020)
Published in Materials (28.06.2020)
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Journal Article
Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering
Peng, Songang, Jin, Zhi, Yao, Yao, Huang, Xinnan, Zhang, Dayong, Niu, Jiebin, Shi, Jingyuan, Zhang, Yanhui, Yu, Guanghui
Published in Advanced electronic materials (01.09.2020)
Published in Advanced electronic materials (01.09.2020)
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Journal Article
Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping
Songang Peng, Zhi Jin, Yao Yao, Ling Li, Dayong Zhang, Jingyuan Shi, Xinnan Huang, Jiebin Niu, Yanhui Zhang, Guanghui Yu
Published in Advanced electronic materials (01.03.2024)
Published in Advanced electronic materials (01.03.2024)
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Journal Article
Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping
Peng, Songang, Jin, Zhi, Yao, Yao, Li, Ling, Zhang, Dayong, Shi, Jingyuan, Huang, Xinnan, Niu, Jiebin, Zhang, Yanhui, Yu, Guanghui
Published in Advanced electronic materials (01.07.2019)
Published in Advanced electronic materials (01.07.2019)
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Journal Article
Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation
Zhang, Xiaorui, Zhu, Huiping, Peng, Song’ang, Xiong, Guodong, Zhu, Chaoyi, Huang, Xinnan, Cao, Shurui, Zhang, Junjun, Yan, Yunpeng, Yao, Yao, Zhang, Dayong, Shi, Jingyuan, Wang, Lei, Li, Bo, Jin, Zhi
Published in Journal of semiconductors (01.11.2021)
Published in Journal of semiconductors (01.11.2021)
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Journal Article
Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors
Yao, Yao, Huang, Xinnan, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Yu, Guanghui, Liu, Qi, Jin, Zhi
Published in Advanced electronic materials (01.05.2019)
Published in Advanced electronic materials (01.05.2019)
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Journal Article
A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection
Zhang, Dayong, Jin, Zhi, Shi, Jingyuan, Peng, Songang, Huang, Xinnan, Yao, Yao, Li, Yankui, Ding, Wuchang, Wang, Dahai
Published in RSC advances (20.01.2020)
Published in RSC advances (20.01.2020)
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Journal Article
Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS 2 : From Thermally Activated to Variable‐Range Hopping
Peng, Songang, Jin, Zhi, Yao, Yao, Li, Ling, Zhang, Dayong, Shi, Jingyuan, Huang, Xinnan, Niu, Jiebin, Zhang, Yanhui, Yu, Guanghui
Published in Advanced electronic materials (01.03.2024)
Published in Advanced electronic materials (01.03.2024)
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Journal Article
Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors
Wang, Shaoqing, Jin, Zhi, Muhammad, Asif, Peng, Songang, Huang, Xinnan, Zhang, Dayong, Shi, Jingyuan
Published in Journal of physics. D, Applied physics (26.10.2016)
Published in Journal of physics. D, Applied physics (26.10.2016)
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Journal Article
How Do Contact and Channel Contribute to the Dirac Points in Graphene Field‐Effect Transistors?
Peng, Song‐ang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Niu, Jiebin, Huang, Xinnan, Yao, Yao, Zhang, Yanhui, Yu, Guanghui
Published in Advanced electronic materials (01.08.2018)
Published in Advanced electronic materials (01.08.2018)
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Journal Article
Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors (Adv. Electron. Mater. 5/2019)
Yao, Yao, Huang, Xinnan, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Yu, Guanghui, Liu, Qi, Jin, Zhi
Published in Advanced electronic materials (01.05.2019)
Published in Advanced electronic materials (01.05.2019)
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Journal Article
Stable P-Type chemical doping of graphene with reduced contact resistance by a single layer PFSA
Zhang, Xiaorui, Yao, Yao, Peng, Songang, Zhu, Chaoyi, Huang, Xinnan, Yan, Yunpeng, Zhang, Dayong, Shi, Jingyuan, Jin, Zhi
Published in Nanotechnology (28.12.2020)
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Published in Nanotechnology (28.12.2020)
Journal Article
Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS 2 : From Thermally Activated to Variable‐Range Hopping
Peng, Songang, Jin, Zhi, Yao, Yao, Li, Ling, Zhang, Dayong, Shi, Jingyuan, Huang, Xinnan, Niu, Jiebin, Zhang, Yanhui, Yu, Guanghui
Published in Advanced electronic materials (01.07.2019)
Published in Advanced electronic materials (01.07.2019)
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Journal Article
Abnormal Dirac point shift in graphene field-effect transistors
Wang, Shaoqing, Jin, Zhi, Huang, Xinnan, Peng, Songang, Zhang, Dayong, Shi, Jingyuan
Published in Materials research express (01.09.2016)
Published in Materials research express (01.09.2016)
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Journal Article
Impact of High-Energy Proton Irradiation on MoS2 Films and Its Field Effect Transistors
Zhu, Huiping, Wang, Lei, Shi, Jingyuan, Huang, Xinnan, Zheng, Zhongshan, Xiong, Guodong, Li, Bo, Gao, Qiang, Yang, Bing, Luo, Jiajun, Han, Zhengsheng, Liu, Xinyu
Published in 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2019)
Published in 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2019)
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Conference Proceeding