HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
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Year of Publication 06.03.2014
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Year of Publication 06.03.2014
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HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
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Year of Publication 01.11.2012
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Year of Publication 01.11.2012
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HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
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Year of Publication 01.11.2012
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Year of Publication 01.11.2012
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Submucous myoma induces uterine inversion
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Published in Taiwanese journal of obstetrics & gynecology (01.06.2006)
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Published in Taiwanese journal of obstetrics & gynecology (01.06.2006)
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High indium uptake and high polarization ratio for group-III nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate
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