Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
Sung, Po-Jung, Chang, Shu-Wei, Kao, Kuo-Hsing, Wu, Chien-Ting, Su, Chun-Jung, Cho, Ta-Chun, Hsueh, Fu-Kuo, Lee, Wen-Hsi, Lee, Yao-Jen, Chao, Tien-Sheng
Published in IEEE transactions on electron devices (01.09.2020)
Published in IEEE transactions on electron devices (01.09.2020)
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Journal Article
Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs
Chen, Bo-Yuan, Chen, Kun-Ming, Chiu, Chia-Sung, Huang, Guo-Wei, Chen, Hsiu-Chih, Chen, Chun-Chi, Hsueh, Fu-Kuo, Chang, Edward Yi
Published in IEEE transactions on electron devices (01.10.2018)
Published in IEEE transactions on electron devices (01.10.2018)
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Journal Article
Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
Lee, Yao-Jen, Cho, Ta-Chun, Chuang, Shang-Shiun, Hsueh, Fu-Kuo, Lu, Yu-Lun, Sung, Po-Jung, Chen, Hsiu-Chih, Current, Michael I., Tseng, Tseung-Yuen, Chao, Tien-Sheng, Hu, Chenming, Yang, Fu-Liang
Published in IEEE transactions on electron devices (01.03.2014)
Published in IEEE transactions on electron devices (01.03.2014)
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Journal Article
High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications
Sung, Po-Jung, Cho, Ta-Chun, Hou, Fu-Ju, Hsueh, Fu-Kuo, Chung, Sheng-Ti, Lee, Yao-Jen, Current, Michael I., Chao, Tien-Sheng
Published in IEEE transactions on electron devices (01.05.2017)
Published in IEEE transactions on electron devices (01.05.2017)
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Journal Article
A Dual-Split-Controlled 4P2N 6T SRAM in Monolithic 3D-ICs With Enhanced Read Speed and Cell Stability for IoT Applications
Chen, Wei-Hao, Chen, Chien-Fu, Chen, Yi-Ju, Chiu, Hsiao-Yun, Shen, Chang-Hong, Shieh, Jia-Min, Hsueh, Fu-Kuo, Yang, Chih-Chao, Chen, Bo-Yuan, Huang, Guo-Wei, Li, Kai-Shin, Yeh, Wen-Kuan, Yamauchi, Hiroyuki, Chang, Meng-Fan
Published in IEEE electron device letters (01.08.2018)
Published in IEEE electron device letters (01.08.2018)
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Journal Article
32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
Hou, Fu-Ju, Sung, Po-Jung, Hsueh, Fu-Kuo, Wu, Chien-Ting, Lee, Yao-Jen, Chang, Mao-Nang, Li, Yiming, Hou, Tuo-Hung
Published in IEEE transactions on electron devices (01.05.2016)
Published in IEEE transactions on electron devices (01.05.2016)
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Journal Article
Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
Sung, Po-Jung, Su, Chun-Jung, Lo, Shih-Hsuan, Hsueh, Fu-Kuo, Lu, Darsen D., Lee, Yao-Jen, Chao, Tien-Sheng
Published in IEEE journal of the Electron Devices Society (2020)
Published in IEEE journal of the Electron Devices Society (2020)
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Journal Article
Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
Yao-Jen Lee, Bo-An Tsai, Chiung-Hui Lai, Zheng-Yao Chen, Fu-Kuo Hsueh, Po-Jung Sung, Current, Michael I., Chih-Wei Luo
Published in IEEE electron device letters (01.10.2013)
Published in IEEE electron device letters (01.10.2013)
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Journal Article
CiM3D: Comparator-in-Memory Designs Using Monolithic 3-D Technology for Accelerating Data-Intensive Applications
Ramanathan, Akshay Krishna, Rangachar, Srivatsa Srinivasa, Govindarajan, Hariram Thirucherai, Hung, Je-Min, Lee, Chun-Ying, Xue, Cheng-Xin, Huang, Sheng-Po, Hsueh, Fu-Kuo, Shen, Chang-Hong, Shieh, Jia-Min, Yeh, Wen-Kuan, Ho, Mon-Shu, Sampson, Jack, Chang, Meng-Fan, Narayanan, Vijaykrishnan
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2021)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2021)
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Journal Article
Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
Yu-Lun Lu, Fu-Kuo Hsueh, Kuo-Ching Huang, Tz-Yen Cheng, Kowalski, Jeff M, Kowalski, Jeff E, Yao-Jen Lee, Tien-Sheng Chao, Ching-Yi Wu
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device Fabrication
CHEN, Hou-Yu, CHEN, Chun-Chi, HSUEH, Fu-Kuo, LIU, Jan-Tsai, SHY, Shyi-Long, WU, Cheng-San, CHIEN, Chao-Hsin, CHENMING HU, HUANG, Chien-Chao, YANG, Fu-Liang
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate
Yao-Jen Lee, Fu-Kuo Hsueh, Shih-Chiang Huang, Kowalski, J.M., Kowalski, J.E., Cheng, A., Ann Koo, Guang-Li Luo, Ching-Yi Wu
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
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Journal Article
Corrections to "Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal"
Lee, Yao-Jen, Hsueh, Fu-Kuo, Current, Michael I., Wu, Ching-Yi, Chao, Tien-Sheng
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
Corrections to "Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review"
Lee, Yao-Jen, Cho, Ta-Chun, Chuang, Shang-Shiun, Hsueh, Fu-Kuo, Lu, Yu-Lun, Sung, Po-Jung, Chen, Hsiu-Chih, Current, Michael I., Tseng, Tseung-Yuen, Chao, Tien-Sheng, Hu, Chenming, Yang, Fu-Liang
Published in IEEE transactions on electron devices (01.07.2023)
Published in IEEE transactions on electron devices (01.07.2023)
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Journal Article
DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries
Chen, Bo-Yuan, Chen, Kun-Ming, Shiao, Yu-Shao Jerry, Lin, Chuang-Ju, Huang, Guo-Wei, Chen, Hsiu-Chih, Hsueh, Fu-Kuo, Shen, Chang-Hong, Shieh, Jia-Min, Chang, Edward Yi
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
Li, Kai-Shin, Wei, Yun-Jie, Chen, Yi-Ju, Chiu, Wen-Cheng, Chen, Hsiu-Chih, Lee, Min-Hung, Chiu, Yu-Fan, Hsueh, Fu-Kuo, Wu, Bo-Wei, Chen, Pin-Guang, Lai, Tung-Yan, Chen, Chun-Chi, Shieh, Jia-Min, Yeh, Wen-Kuan, Salahuddin, Sayeef, Hu, Chenming
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
RF power FinFET transistors with a wide drain-extended fin
Chen, Bo-Yuan, Chen, Kun-Ming, Chiu, Chia-Sung, Huang, Guo-Wei, Chen, Hsiu-Chih, Chen, Chun-Chi, Hsueh, Fu-Kuo, Chen, Min-Cheng, Chang, Edward Yi
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article