Reliability Improvement of 28-nm High- k /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
Yang, Yi-Lin, Zhang, Wenqi, Cheng, Chi-Yun, Huang, Yi-Ping, Chen, Pin-Tseng, Hsu, Chia-Wei, Chin, Li-Kong, Lin, Chien-Ting, Hsu, Che-Hua, Lai, Chien-Ming, Yeh, Wen-Kuan
Published in IEEE electron device letters (01.08.2012)
Published in IEEE electron device letters (01.08.2012)
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Journal Article
CMOS Dual-Work-Function Engineering by Using Implanted Ni-FUSI
Chien-Ting Lin, Ramin, M., Pas, M., Wise, R., Yean-Kuen Fang, Che-Hua Hsu, Yao-Tsung Huang, Li-Wei Cheng, Ma, M.
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
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Journal Article
Effect of Silicon Thickness on Contact-Etch-Stop-Layer-Induced Silicon/Buried-Oxide Interface Stress for Partially Depleted SOI
Chien-Ting Lin, Yean-Kuen Fang, Wen-Kuan Yeh, Tung-Hsing Lee, Ming-Shing Chen, Che-Hua Hsu, Liang-Wei Chen, Li-Wei Cheng, Ma, M.
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
PMOSFET Reliability Study for Direct Silicon Bond (DSB) Hybrid Orientation Technology (HOT)
Yao-Tsung Huang, Pinto, A., Chien-Ting Lin, Che-Hua Hsu, Ramin, M., Seacrist, M., Ries, M., Matthews, K., Nguyen, B., Freeman, M., Wilks, B., Stager, C., Johnson, C., Denning, L., Bennett, J., Joshi, S., Chiang, S., Li-Wei Cheng, Tung-Hsing Lee, Ma, M., Osbert Cheng, Wise, R.
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
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Journal Article
Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng, O., Po Chin Huang
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
A Novel Strain Method for Enhancement of 90-nm Node and Beyond FUSI-Gated CMOS Performance
Chien-Ting Lin, Yean-Kuen Fang, Wen-Kuan Yeh, Tung-Hsing Lee, Ming-Shing Chen, Chieh-Ming Lai, Che-Hua Hsu, Liang-Wei Chen, Li-Wei Cheng, Ma, M.
Published in IEEE electron device letters (01.02.2007)
Published in IEEE electron device letters (01.02.2007)
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Journal Article
Low-Frequency Noise Characteristics for Various ZrO2-Added HfO2-Based 28-nm High-k/Metal-Gate nMOSFETs
SHIH CHANG TSAI, SAN LEIN WU, CHEN, Jone F, BO CHIN WANG, SHOOU JINN CHANG, CHE HUA HSU, CHIH WEI YANG, CHIEN MING LAI, CHIA WEI HSU, OSBERT CHENG, PO CHIN HUANG
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Low-Frequency Noise Characteristics for Various -Added -Based 28-nm High- k/Metal-Gate nMOSFETs
Tsai, Shih Chang, Huang, Po Chin, Chen, Jone F., Wu, San Lein, Wang, Bo Chin, Chang, Shoou Jinn, Hsu, Che Hua, Yang, Chih Wei, Lai, Chien Ming, Hsu, Chia Wei, Cheng, Osbert
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Effect of \hbox Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High- \kappa Dielectric nMOSFETs
Chen, Yu-Ting, Chen, Kun-Ming, Lin, Cheng-Li, Yeh, Wen-Kuan, Huang, Guo-Wei, Lai, Chien-Ming, Chen, Yi-Wen, Hsu, Che-Hua, Huang, Fon-Shan
Published in IEEE transactions on electron devices (01.03.2011)
Published in IEEE transactions on electron devices (01.03.2011)
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Journal Article
Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High- k/Metal-Gate nMOSFETs
HSU, Chia-Wei, FANG, Yean-Kuen, YEH, Wen-Kuan, CHEN, Chun-Yu, LIN, Chien-Ting, HSU, Che-Hua, CHENG, Li-Wei, LAI, Chien-Ming
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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Journal Article
Significant improvement of 45 nm and beyond complementary metal oxide semiconductor field effect transistor performance with fully silicided and ultimate spacer process technology
Hsu, Chia-Wei, Fang, Yean-Kuen, Lin, Chien-Ting, Yeh, Wen-Kuan, Hsu, Che-Hua, Lai, Chieh-Ming, Cheng, Li-Wei, Ma, Mike
Published in Thin solid films (01.09.2008)
Published in Thin solid films (01.09.2008)
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Journal Article
Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications
Xiong, Weize W., Cleavelin, C. Rinn, Hsu, Che-Hua, Ma, Mike, Schruefer, Klaus, Von Arnim, Klaus, Schulz, Thomas, Cayrefourcq, Ian, Mazure, Carlos, Patruno, Paul, Kennard, Mark, Shin, Kyoungsub, Xin, Sun, King Liu, Tsu-Jae, Cherkaoui, Karim, Colinge, J.P.
Published in ECS transactions (27.04.2007)
Published in ECS transactions (27.04.2007)
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Journal Article
Extra Bonus on Transistor Optimization with Stress Enhanced Notched-Gate Technology for Sub-90 nm Complementary Metal Oxide Semiconductor Field Effect Transistor
Lin, Chien-Ting, Fang, Yean-Kuen, Lai, Chieh-Ming, Yeh, Wen-Kuan, Hsu, Che-Hua, Cheng, Li-Wei, Huang, Yao-Tsung, Ma, Guang Hwa
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer
Patruno, P., Kostrzewa, M., Landry, K., Weize Xiong, Cleavelin, C.R., Che-Hua Hsu, Ma, M., Colinge, J.-P.
Published in 2007 IEEE International SOI Conference (01.10.2007)
Published in 2007 IEEE International SOI Conference (01.10.2007)
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Conference Proceeding
Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches
Lin, Chien-Ting, Fang, Yean-Kuen, Yeh, Wen-Kuan, Lee, Tung-Hsing, Chen, Ming-Hing, Hsu, Che-Hua, Chen, Liang-Wei, Chang, Hui-Chen, Tsai, Cheng-Tzung, Ma, Mike
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Comparison of the trap behavior between ZrO 2 and HfO 2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Wang, Bo Chin, Wu, San Lein, Lu, Yu Ying, Chang, Shoou Jinn, Chen, Jone Fang, Tsai, Shih Chang, Hsu, Che Hua, Yang, Chih Wei, Chen, Cheng Guo, Cheng, Osbert, Huang, Po Chin
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Capping layer induced degradations in nano MOSFETs with scaled IL
Tung-Hsing Lee, Chen, S.-M, Chia-Wei Hsu, Yean-Kuen Fang, Feng-Renn Juang, Che-Hua Hsu, Li-Wei Cheng, Chien-Ming Lai, Yi-Wen Chen
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
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Conference Proceeding
Effect of hbox NH 3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High- Kappa Dielectric nMOSFETs
Chen, Yu-Ting, Chen, Kun-Ming, Lin, Cheng-Li, Yeh, Wen-Kuan, Huang, Guo-Wei, Lai, Chien-Ming, Chen, Yi-Wen, Hsu, Che-Hua, Huang, Fon-Shan
Published in IEEE transactions on electron devices (01.03.2011)
Published in IEEE transactions on electron devices (01.03.2011)
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Journal Article
Effect of [Formula Omitted] Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-[Formula Omitted] Dielectric nMOSFETs
Chen, Yu-Ting, Chen, Kun-Ming, Lin, Cheng-Li, Yeh, Wen-Kuan, Huang, Guo-Wei, Lai, Chien-Ming, Chen, Yi-Wen, Hsu, Che-Hua, Huang, Fon-Shan
Published in IEEE transactions on electron devices (01.03.2011)
Published in IEEE transactions on electron devices (01.03.2011)
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Journal Article