High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology
Peng, Ping Chun, Chen, Yu-Zheng, Hsiao, Woan Yun, Chen, Kuang-Hsin, Lin, Ching-Pin, Tien, Bor-Zen, Chang, Tzong-Sheng, Lin, Chrong Jung, King, Ya-Chin
Published in IEEE electron device letters (01.10.2015)
Published in IEEE electron device letters (01.10.2015)
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Journal Article
A New High-Density Twin-Gate Isolation One-Time Programmable Memory Cell in Pure 28-nm CMOS Logic Process
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Published in IEEE transactions on electron devices (01.01.2015)
Published in IEEE transactions on electron devices (01.01.2015)
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A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell
Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
SEMICONDUCTOR STRUCTURE HAVING DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
LIN CHRONG-JUNG, CHANG TZONG-SHENG, KING YAIN, CHEN HUANG-KUI, HSIAO WOAN-YUN
Year of Publication 07.06.2018
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Year of Publication 07.06.2018
Patent
SEMICONDUCTOR STRUCTURE HAVING DATA STORAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
LIN CHRONG-JUNG, CHANG TZONG-SHENG, KING YAIN, CHEN HUANG-KUI, HSIAO WOAN-YUN
Year of Publication 18.08.2016
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Year of Publication 18.08.2016
Patent
SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
KING YA CHIN, CHEN HUANG KUI, HSIAO WOAN YUN, LIN CHRONG JUNG, CHANG TZONG SHENG
Year of Publication 23.08.2016
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Year of Publication 23.08.2016
Patent
A high density Twin-Gate OTP cell in pure 28nm CMOS process
Woan Yun Hsiao, Chin Yu Mei, Wen Chao Shen, Tzong Sheng Chang, Yue Der Chih, Ya-Chin King, Chrong Jung Lin
Published in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2014)
Published in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2014)
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Conference Proceeding
A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications
Chen, Yu-Zheng, Yuan, Jo En, Peng, Ping Chun, Hsiao, Woan Yun, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
A new 28nm high-k metal gate CMOS logic one-time programmable memory cell
Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.01.2014)
Published in Japanese Journal of Applied Physics (01.01.2014)
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Journal Article
Semiconductor structure with data storage structure and method for manufacturing the same
Hsiao, Woan-Yun, Chen, Huang-Kui, Chang, Tzong-Sheng, Lin, Chrong-Jung, King, Ya-Chin
Year of Publication 16.05.2023
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Year of Publication 16.05.2023
Patent