Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
Tischler, M.A., Latulipe, D., Kuech, T.F., Magerlein, J.H., Hovel, H.J.
Published in Journal of crystal growth (01.11.1992)
Published in Journal of crystal growth (01.11.1992)
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Conference Proceeding
Contact reactions in Pd/GaAs junctions
Olowolafe, J. O., Ho, P. S., Hovel, H. J., Lewis, J. E., Woodall, J. M.
Published in Journal of applied physics (01.02.1979)
Published in Journal of applied physics (01.02.1979)
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Journal Article
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
YIH-CHENG SHIH, CALLEGARI, A, MURAKAMI, M, WILKIE, E. L, HOVEL, H. J, PARKS, C. C, CHILDS, K. D
Published in Journal of applied physics (15.08.1988)
Published in Journal of applied physics (15.08.1988)
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Solar Cells on Large‐Grain GaAs Thin Films
Vernon, S. M., Blakeslee, A. E., Hovel, H. J.
Published in Journal of the Electrochemical Society (01.04.1979)
Published in Journal of the Electrochemical Society (01.04.1979)
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Development of stacking faults in strained silicon layers
Bedell, S.W., Reznicek, A., Yang, B., Hovel, H.J., Ott, J.A., Fogel, K., Domenicucci, A.G., Sadana, D.K.
Published in 2005 IEEE International SOI Conference Proceedings (2005)
Published in 2005 IEEE International SOI Conference Proceedings (2005)
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Conference Proceeding
(Invited) III-V Photovoltaics: Recent Developments and Prospects
Sosa, Norma, Van Kessel, Theodore, Martin, Yves, Hovel, Harold
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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A GaAs MESFET IC for optical multiprocessor networks
Crow, J.D., Anderson, C.J., Bermon, S., Callegari, A., Ewen, J.F., Feder, J.D., Greiner, J.H., Harris, E.P., Hoh, P.D., Hovel, H.J., Magerlein, J.H., McKoy, T.E., Pomerene, A.T.S., Rogers, D.L., Scott, G.J., Thomas, M., Mulvey, G.W., Ko, B.K., Ohashi, T., Scontras, M., Widiger, D.
Published in IEEE transactions on electron devices (01.02.1989)
Published in IEEE transactions on electron devices (01.02.1989)
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