Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET
Tsai, Meng-Ju, Chen, Pin-Jui, Hsu, Chieng-Chung, Ruan, Dun-Bao, Hou, Fu-Ju, Peng, Po-Yang, Wu, Yung-Chun
Published in IEEE electron device letters (01.08.2019)
Published in IEEE electron device letters (01.08.2019)
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Journal Article
Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance
Lin, Yi-Wen, Chang, Hao-Hsiang, Huang, Yu-Hsien, Sun, Chong-Jhe, Yan, Siao-Cheng, Lin, Shan-Wen, Luo, Guang-Li, Wu, Chien-Ting, Wu, Yung-Chun, Hou, Fu-Ju
Published in IEEE electron device letters (01.12.2021)
Published in IEEE electron device letters (01.12.2021)
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Journal Article
High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
Yao, Yi-Ju, Yang, Ching-Ru, Tseng, Ting-Yu, Chang, Heng-Jia, Lin, Tsai-Jung, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun, Chang-Liao, Kuei-Shu
Published in Nanomaterials (Basel, Switzerland) (08.04.2023)
Published in Nanomaterials (Basel, Switzerland) (08.04.2023)
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Journal Article
32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
Hou, Fu-Ju, Sung, Po-Jung, Hsueh, Fu-Kuo, Wu, Chien-Ting, Lee, Yao-Jen, Chang, Mao-Nang, Li, Yiming, Hou, Tuo-Hung
Published in IEEE transactions on electron devices (01.05.2016)
Published in IEEE transactions on electron devices (01.05.2016)
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Journal Article
3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET
Lin, Yi-Wen, Lin, Shan-Wen, Chen, Bo-An, Sun, Chong-Jhe, Yan, Siao-Cheng, Luo, Guang-Li, Wu, Yung-Chun, Hou, Fu-Ju
Published in IEEE journal of the Electron Devices Society (01.01.2023)
Published in IEEE journal of the Electron Devices Society (01.01.2023)
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Journal Article
High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications
Sung, Po-Jung, Cho, Ta-Chun, Hou, Fu-Ju, Hsueh, Fu-Kuo, Chung, Sheng-Ti, Lee, Yao-Jen, Current, Michael I., Chao, Tien-Sheng
Published in IEEE transactions on electron devices (01.05.2017)
Published in IEEE transactions on electron devices (01.05.2017)
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Journal Article
Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO
Sun, Chong-Jhe, Yao, Yi-Ju, Yan, Siao-Cheng, Lin, Yi-Wen, Lin, Shan-Wen, Hou, Fu-Ju, Luo, Guang-Li, Wu, Yung-Chun
Published in IEEE journal of the Electron Devices Society (2022)
Published in IEEE journal of the Electron Devices Society (2022)
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Journal Article
Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope
Tsai, Meng-Ju, Chen, Pin-Jui, Ruan, Dun-Bao, Hou, Fu-Ju, Peng, Po-Yang, Chen, Liu-Gu, Wu, Yung-Chun
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review
Lee, Yao-Jen, Luo, Guang-Li, Hou, Fu-Ju, Chen, Min-Cheng, Yang, Chih-Chao, Shen, Chang-Hong, Wu, Wen-Fa, Shieh, Jia-Min, Yeh, Wen-Kuan
Published in IEEE journal of the Electron Devices Society (01.09.2016)
Published in IEEE journal of the Electron Devices Society (01.09.2016)
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Journal Article
3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process
Lin, Yi-Wen, Chen, Bo-An, Huang, Kai-Wei, Chen, Bo-Xu, Luo, Guang-Li, Wu, Yung-Chun, Hou, Fu-Ju
Published in IEEE electron device letters (01.10.2024)
Published in IEEE electron device letters (01.10.2024)
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Journal Article
Low-temperature self-assembly of copper phthalocyanine nanofibers
Suen, Shich-Chang, Whang, Wha-Tzong, Hou, Fu-Ju, Dai, Bau-Tong
Published in Organic electronics (01.10.2006)
Published in Organic electronics (01.10.2006)
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Journal Article
Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer
Lin, Yi-Wen, Huang, Yu-Hsien, Lin, Shan-Wen, Luo, Guang-Li, Lin, Yu-Hsien, Wu, Yung-Chun, Hou, Fu-Ju
Published in ECS journal of solid state science and technology (01.05.2024)
Published in ECS journal of solid state science and technology (01.05.2024)
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Journal Article
Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
Sun, Chong-Jhe, Yan, Siao-Cheng, Lin, Yi-Wen, Tsai, Meng-Ju, Tsai, Yu-Chen, Chou, Chuan-Pu, Hou, Fu-Ju, Luo, Guang-Li, Wu, Yung-Chun
Published in ECS journal of solid state science and technology (01.06.2021)
Published in ECS journal of solid state science and technology (01.06.2021)
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Journal Article
Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO
Chen, Bo-An, Lin, Yi-Wen, Chang, Hao-Hsiang, Chang, Chih-Hsiang, Huang, Ming-Yueh, Zhong, Xin-Chan, Yan, Siao-Cheng, Sun, Chong-Jhe, Hou, Fu-Ju, Wu, Yung-Chun
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
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Conference Proceeding
High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
Lin, Horng-Chih, Wang, Meng-Fan, Hou, Fu-Ju, Lin, Hong-Nien, Lu, Chia-Yu, Liu, Jan-Tsai, Huang, Tiao-Yuan
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor
Lin, Horng-Chih, Wang, Meng-Fan, Hou, Fu-Ju, Liu, Jan-Tsai, Huang, Tiao-Yuan, Sze, Simon M.
Published in Japanese Journal of Applied Physics (01.06.2002)
Published in Japanese Journal of Applied Physics (01.06.2002)
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Journal Article
High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications
Yao-Jen Lee, Ta-Chun Cho, Po-Jung Sung, Kuo-Hsing Kao, Fu-Kuo Hsueh, Fu-Ju Hou, Po-Cheng Chen, Hsiu-Chih Chen, Chien-Ting Wu, Shu-Han Hsu, Yi-Ju Chen, Yao-Ming Huang, Yun-Fang Hou, Wen-Hsien Huang, Chih-Chao Yang, Bo-Yuan Chen, Kun-Lin Lin, Min-Cheng Chen, Chang-Hong Shen, Guo-Wei Huang, Kun-Ping Huang, Current, Michael I., Yiming Li, Samukawa, Seiji, Wen-Fa Wu, Jia-Min Shieh, Tien-Sheng Chao, Wen-Kuan Yeh
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four facets by dry etch technology
Yao-Jen Lee, Fu-Ju Hou, Shang-Shiun Chuang, Fu-Kuo Hsueh, Kuo-Hsing Kao, Po-Jung Sung, Wei-You Yuan, Jay-Yi Yao, Yu-Chi Lu, Kun-Lin Lin, Chien-Ting Wu, Hisu-Chih Chen, Bo-Yuan Chen, Guo-Wei Huang, Chen, Henry J. H., Jiun-Yun Li, Yiming Li, Samukawa, Seiji, Tien-Sheng Chao, Tseung-Yuen Tseng, Wen-Fa Wu, Tuo-Hung Hou, Wen-Kuan Yeh
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Growth enhancement and field emission characteristics of one-dimensional 3,4,9,10-perylenetetracarboxylic dianhydride nanostructures on pillared titanium substrate
Suen, Shich-Chang, Whang, Wha-Tzong, Hou, Fu-Ju, Dai, Bau-Tong
Published in Organic electronics (01.10.2007)
Published in Organic electronics (01.10.2007)
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Journal Article