Shear-induced preferential alignment of carbon nanotubes resulted in anisotropic electrical conductivity of polymer composites
Lanticse, Leslie Joy, Tanabe, Yasuhiro, Matsui, Keitaro, Kaburagi, Yutaka, Suda, Katsumi, Hoteida, Masayuki, Endo, Morinobu, Yasuda, Eiichi
Published in Carbon (New York) (01.11.2006)
Published in Carbon (New York) (01.11.2006)
Get full text
Journal Article
SUBSTRATE HAVING BUFFER LAYER STRUCTURE FOR GROWING NITRIDE SEMICONDUCTOR LAYER
TERAGUCHI, NOBUAKI, MATSUBAYASHI, MASAKAZU, ITO, NOBUYUKI, HONDA, DAISUKE, HOTEIDA, MASAYUKI
Year of Publication 28.03.2013
Get full text
Year of Publication 28.03.2013
Patent
SUBSTRATE HAVING BUFFER LAYER STRUCTURE FOR GROWING NITRIDE SEMICONDUCTOR LAYER
TERAGUCHI, NOBUAKI, MATSUBAYASHI, MASAKAZU, HOTEIDA, MASAYUKI, HONDA, DAISUKE, ITO, NOBUYUKI
Year of Publication 21.03.2013
Get full text
Year of Publication 21.03.2013
Patent
EPITAXIAL WAFER FOR HETEROJUNCTION FIELD-EFFECT TRANSISTOR
TERAGUCHI, NOBUAKI, MATSUKASA, HARUHIKO, MATSUBAYASHI, MASAKAZU, HOTEIDA, MASAYUKI, HONDA, DAISUKE, ITO, NOBUYUKI
Year of Publication 25.07.2013
Get full text
Year of Publication 25.07.2013
Patent
NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, NITRIDE SEMICONDUCTOR TRANSISTOR ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR STRUCTURE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
FUNAKI, TAKESHI, KINOSHITA, TAKAO, ARAKI, MASAHIRO, MURATA, TOHRU, OGAWA, ATSUSHI, YOSHIDA, SHINYA, HOTEIDA, MASAYUKI, TAKIGUCHI, HARUHISA
Year of Publication 05.07.2012
Get full text
Year of Publication 05.07.2012
Patent
Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate
Matsuno, Shunichi, Hoteida, Masayuki, Yoshimura, Masashi, Usami, Shigeyoshi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 23.01.2024
Get full text
Year of Publication 23.01.2024
Patent
Epitaxial wafer for heterojunction type field effect transistor
HOTEIDA MASAYUKI, ITO NOBUYUKI, MATSUBAYASHI MASAKAZU, HONDA DAISUKE, MATSUKASA HARUHIKO, TERAGUCHI NOBUAKI
Year of Publication 18.08.2015
Get full text
Year of Publication 18.08.2015
Patent