Search Results - "HORIUCHI MASATADA" :: K.UTB vyhledávací portál

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Electrostatic force imaging by tunneling acoustic microscopy

by TAKATA, K, OKAWA, T, HORIUCHI, M
Published in Japanese Journal of Applied Physics (01.02.1991)

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Lattice defects in high-dose As implantation into localized Si area

by TAMURA, M, HORIUCHI, M
Published in Japanese Journal of Applied Physics (01.12.1988)

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SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

by HORIUCHI, MASATADA
Year of Publication 13.01.2000

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SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

by HORIUCHI, MASATADA
Year of Publication 04.02.1999

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

by HORIUCHI MASATADA, TAKAHAMA TAKASHI
Year of Publication 25.06.2003

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Dynamic-threshold SOI device with a J-FET embedded source structure and a merged body-bias-control transistor - Part I: A J-FET embedded source structure properties

by Horiuchi, Masatada
Published in IEEE transactions on electron devices (01.08.2000)

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Dynamic-threshold SOI device with a J-FET embedded source structure and a merged body-bias-control transistor - Part II: Circuit simulation

by Horiuchi, Masatada
Published in IEEE transactions on electron devices (01.08.2000)

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Journal Article

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INSULATING GATE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

by HORIUCHI MASATADA, TAKAHAMA TAKASHI
Year of Publication 04.03.2002

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Patent

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Capacitance analysis of devices with electrically floating regions

by Yamaguchi, Ken, Horiuchi, Masatada
Published in Solid-state electronics (01.12.2004)

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Journal Article

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SEMICONDUCTOR DEVICE FOR SOI STRUCTURE HAVING LEAD CONDUCTOR SUITABLE FOR FINE PATTERNING

by UCHINO, TAKASHI, NAKAMURA, TOHRU, ONAI, TAKAHIRO, WASHIO, KATSUYOSHI, HORIUCHI, MASATADA
Year of Publication 16.10.2000

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

by NAKAMURA, TOHRU, IKEDA, TAKAHIDE, HORIUCHI, MASATADA, YAMAGUCHI, KEN
Year of Publication 20.02.1997

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Characteristics of silicon water-bond strengthening by annealing

by Horiuchi, Masatada, Aoki, Shigeru
Published in Journal of the Electrochemical Society (01.01.1992)

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Journal Article

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BESS: a source structure that fully suppresses the floating body effects in SOI CMOSFETs

by Horiuchi, M., Tamura, M.
Published in IEEE transactions on electron devices (01.05.1998)

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Journal Article

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Semiconductor device and method of producing the same

by HORIUCHI MASATADA
Year of Publication 04.05.2004

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Patent

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Semiconductor device and method of producing the same

by Horiuchi, Masatada
Year of Publication 04.05.2004

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Semiconductor integrated circuit and method for manufacturing the same

by Horiuchi, Masatada
Year of Publication 11.11.2003

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Semiconductor integrated circuit and method for manufacturing the same

by HORIUCHI MASATADA
Year of Publication 11.11.2003

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Patent

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Semiconductor device and method of producing the same

by Horiuchi, Masatada
Year of Publication 25.03.2003

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Semiconductor device and method of producing the same

by HORIUCHI MASATADA
Year of Publication 25.03.2003

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Semiconductor device and method of producing the same

by HORIUCHI MASATADA
Year of Publication 20.02.2003

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Patent

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