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"HORIUCHI MASATADA"
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"HORIUCHI MASATADA"
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MIS semiconductor device and manufacturing method thereof
by
Tsuchiya, Ryuta
,
Horiuchi
,
Masatada
Year of Publication
01.06.2004
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Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion
by
HORIUCHI MASATADA
,
TAKAHAMA TAKASHI
Year of Publication
10.02.2004
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43
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Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion
by
Horiuchi
,
Masatada
,
Takahama, Takashi
Year of Publication
10.02.2004
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44
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A write-operation model for the FCAT-II-A 50 NS at 15 V alterable nonvolatile memory
by
Horiuchi
,
Masatada
Published in
Solid-state electronics
(01.01.1984)
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45
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MIS semiconductor device and manufacturing method thereof
by
TSUCHIYA RYUTA
,
HORIUCHI MASATADA
Year of Publication
27.11.2003
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MIS semiconductor device and manufacturing method thereof
by
Tsuchiya, Ryuta
,
Horiuchi
,
Masatada
Year of Publication
27.11.2003
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47
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Characteristics of silicon wafer-bond strengthening by annealing
by
HORIUCHI, M
,
AOKI, S
Published in
Journal of the Electrochemical Society
(1992)
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48
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Semiconductor device and process for forming same
by
Takahama, Takashi
,
Horiuchi
,
Masatada
Year of Publication
07.08.2003
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Semiconductor device and process for forming same
by
HORIUCHI MASATADA
,
TAKAHAMA TAKASHI
Year of Publication
07.08.2003
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Semiconductor device and manufacturing method thereof
by
Takahama, Takashi
,
Horiuchi
,
Masatada
Year of Publication
19.06.2003
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Semiconductor device and manufacturing method thereof
by
HORIUCHI MASATADA
,
TAKAHAMA TAKASHI
Year of Publication
19.06.2003
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52
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Suppression Of Bit-line-induced Disturbance In SOI DRAM/SRAM Cells By Bipolar Embedded Source Structure (BESS)
by
Horiuchi
,
Sakata
,
Kimura
Published in
1997 Symposium on VLSI Technology
(1997)
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Conference Proceeding
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53
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Insulated gate field effect transistor and method of fabricating the same
by
TAKAHAMA, TAKASHI
,
HORIUCHI
,
MASATADA
Year of Publication
01.01.2003
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Insulated gate field effect transistor and method of fabricating the same
by
Takahama, Takashi
,
Horiuchi
,
Masatada
Year of Publication
28.02.2002
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55
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Insulated gate field effect transistor and method of fabricating the same
by
HORIUCHI MASATADA
,
TAKAHAMA TAKASHI
Year of Publication
28.02.2002
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56
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Solid-II; High-Voltage, High-Gain Ka-Channel-Length CMOSFETs Using Silicide with Selfaligned Ultra-Shallow (3S) Junction
by
Horiuchi
,
Masatada
Published in
1985 Symposium on VLSI Technology. Digest of Technical Papers
(01.05.1985)
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57
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Operation model of floating-Si-gate channel-corner-avalanche-transition (FCAT) nonvolatile memory devices
by
Horiuchi
,
Masatada
,
Katto, Hisao
Published in
Solid-state electronics
(1980)
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58
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Semiconductor memory element - of long stability with differential insulating layers in field effect structure (NL040576)
by
HORIUCHI
,
MASATADA
Year of Publication
06.05.1976
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Method for making an extremely thin silicon oxide film
by
HORIUCHI
;
MASATADA
Year of Publication
02.09.1975
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60
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SEMICONDUCTOR DEVICE
by
SAITO SHINICHI
,
TSUCHIYA RYUTA
,
HORIUCHI MASATADA
Year of Publication
18.05.2006
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