Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation
Horiguchi, Seiji, Nagase, Masao, Shiraishi, Kenji, Kageshima, Hiroyuki, Takahashi, Yasuo, Murase, Katsumi
Published in Japanese Journal of Applied Physics (01.01.2001)
Published in Japanese Journal of Applied Physics (01.01.2001)
Get full text
Journal Article
Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
Horiguchi, Seiji, Fujiwara, Akira, Inokawa, Hiroshi, Takahashi, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
Get full text
Journal Article
Threshold Voltage of Si Single-Electron Transistor
Fujiwara, Akira, Horiguchi, Seiji, Nagase, Masao, Takahashi, Yasuo
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
Get full text
Journal Article
Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach
Shiraishi, Kenji, Nagase, Masao, Horiguchi, Seiji, Kageshima, Hiroyuki, Uematsu, Masashi, Takahashi, Yasuo, Murase, Katsumi
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2000)
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2000)
Get full text
Journal Article
Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor
Get full text
Journal Article
Conference Proceeding
Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
Nishiguchi, Katsuhiko, Crauste, Olivier, Namatsu, Hideo, Horiguchi, Seiji, Ono, Yukinori, Fujiwara, Akira, Takahashi, Yasuo, Inokawa, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2005)
Published in Japanese Journal of Applied Physics (01.10.2005)
Get full text
Journal Article
Quantized conductance of a silicon wire fabricated by separation-by-implanted-oxygen technology
NAKAJIMA, Y, TAKAHASHI, Y, HORIGUCHI, S, IWADATE, K, NAMATSU, H, KURIHARA, K, TABE, M
Published in Japanese Journal of Applied Physics (01.02.1995)
Published in Japanese Journal of Applied Physics (01.02.1995)
Get full text
Conference Proceeding
Journal Article
Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on \mb{100\mb} Plane
Seiji Horiguchi, Seiji Horiguchi, Yasuyuki Nakajima, Yasuyuki Nakajima, Yasuo Takahashi, Yasuo Takahashi, Michiharu Tabe, Michiharu Tabe
Published in Japanese Journal of Applied Physics (01.10.1995)
Published in Japanese Journal of Applied Physics (01.10.1995)
Get full text
Journal Article
Fabrication of one-dimensional silicon nanowire structures with a self-aligned point contact
NAMATSU, H, NAGASE, M, KURIHARA, K, HORIGUCHI, S, MAKINO, T
Published in Japanese Journal of Applied Physics (15.09.1996)
Published in Japanese Journal of Applied Physics (15.09.1996)
Get full text
Journal Article
Ultimately thin double-gate SOI MOSFETs
Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., Murase, K.
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
Get full text
Journal Article
Photooxygenation of Diphenanthro[5,4,3-abcd : 5′,4′,3′-jklm]perylene
Ohshima, Shigeru, Uchida, Akira, Horiguchi, Seiji, Suzuki, Atsushi, Fujisawa, Shoji, Oonishi, Isao
Published in Bulletin of the Chemical Society of Japan (01.04.1994)
Published in Bulletin of the Chemical Society of Japan (01.04.1994)
Get full text
Journal Article
Transport properties of silicon nanostructures fabricated on SIMOX substrates
Murase, Katsumi, Takahashi, Yasuo, Nakajima, Yasuyuki, Namatsu, Hideo, Nagase, Masao, Kurihara, Kenji, Iwadate, Kazumi, Horiguchi, Seiji, Tabe, Michiharu, Izumi, Katsutoshi
Published in Microelectronic engineering (01.06.1995)
Published in Microelectronic engineering (01.06.1995)
Get full text
Journal Article
Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs
Omura, Y., Horiguchi, S., Tabe, M., Kishi, K.
Published in IEEE electron device letters (01.12.1993)
Published in IEEE electron device letters (01.12.1993)
Get full text
Journal Article
Ultimately thin double-gate SOI MOSFETs
Ernst, T, Cristoloveanu, S, Ghibaudo, G, Ouisse, T, Horiguchi, Seiji, Ono, Yukinori, Takahashi, Yasuo, Murase, Katsumi
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
Get full text
Journal Article