A Novel Method for Lightning Prediction by Direct Electric Field Measurements at the Ground Using Recurrent Neural Network
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Published in IEICE Transactions on Information and Systems (01.09.2022)
Published in IEICE Transactions on Information and Systems (01.09.2022)
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Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
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Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
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Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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High Seebeck coefficient in PVD-WS2 film with grain size enlargement
Hamada, Takuya, Hamada, Masaya, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Positive Seebeck coefficient of niobium-doped MoS 2 film deposited by sputtering and activated by sulfur vapor annealing
Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Journal Article
High Seebeck coefficient in PVD-WS 2 film with grain size enlargement
Hamada, Takuya, Hamada, Masaya, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
WS 2 Film by Sputtering and Sulfur-Vapor Annealing, and its p MISFET With TiN/HfO 2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its p MISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Iriya Muneta, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2021)
Published in IEEE journal of the Electron Devices Society (01.01.2021)
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Journal Article
WS2pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO2-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
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