Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure
Iwaya, M., Kasugai, H., Kawashima, T., Iida, K., Honshio, A., Miyake, Y., Kamiyama, S., Amano, H., Akasaki, I.
Published in Thin solid films (25.10.2006)
Published in Thin solid films (25.10.2006)
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Journal Article
Conference Proceeding
UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology
Kamiyama, S., Iida, K., Kawashima, T., Kasugai, H., Mishima, S., Honshio, A., Miyake, Y., Iwaya, M., Amano, H., Akasaki, I.
Published in IEEE journal of selected topics in quantum electronics (01.09.2005)
Published in IEEE journal of selected topics in quantum electronics (01.09.2005)
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Journal Article
Light extraction process in moth-eye structure
Kasugai, H., Nagamatsu, K., Miyake, Y., Honshio, A., Kawashima, T., Iida, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Kinoshita, H., Shiomi, H.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
GaN growth on (30 8) 4H-SiC substrate for reduction of internal polarization
Kamiyama, S., Honshio, A., Kitano, T., Iwaya, M., Amano, H., Akasaki, I., Kinoshita, H., Shiomi, H.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate
Imura, M., Honshio, A., Miyake, Y., Nakano, K., Tsuchiya, N., Tsuda, M., Okadome, Y., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Journal Article
350.9 nm UV laser diode grown on sapphire substrate
Iwaya, M., Iida, K., Kawashima, T., Miyazaki, A., Kasugai, H., Mishima, S., Honshio, A., Miyake, Y., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.01.2005)
Published in Physica status solidi. C (01.01.2005)
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Journal Article
350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Journal Article
Conference Proceeding
High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
Kasugai, Hideki, Miyake, Yasuto, Honshio, Akira, Mishima, Shunsuke, Kawashima, Takeshi, Iida, Kazuyoshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Kinoshita, Hiroyuki, Shiomi, Hiromu
Published in Japanese Journal of Applied Physics (01.10.2005)
Published in Japanese Journal of Applied Physics (01.10.2005)
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Journal Article
Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
Tsuchiya, Yosuke, Okadome, Yoshizane, Honshio, Akira, Miyake, Yasuto, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
KAWASHIMA, Takeshi, IIDA, Kazuyoshi, MIYAKE, Yasuto, HONSHIO, Akira, KASUGAI, Hideki, IMURA, Masataka, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Conference Proceeding
Journal Article
Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate
IMURA, M, HONSHIO, A, AMANO, H, AKASAKI, I, MIYAKE, Y, NAKANO, K, TSUCHIYA, N, TSUDA, M, OKADOME, Y, BALAKRISHNAN, K, IWAYA, M, KAMIYAMA, S
Published in Physica. B, Condensed matter (2006)
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Published in Physica. B, Condensed matter (2006)
Conference Proceeding
UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template
Kamiyama, S., Iida, K., Kawashima, T., Kasugai, H., Mishima, S., Honshio, A., Miyake, Y., Iwaya, M., Amano, H., Akasaki, I.
Published in 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest (2004)
Published in 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest (2004)
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Conference Proceeding
Sapphire baseplate, epitaxial substrate and semiconductor device
TSUDA, MICHINOBU, KAMIYAMA, SATOSHI, ISAMU AKASAKI, IMURA, MASATAKA, HONSHIO, AKIRA, IWAYA, MOTOAKI, HIROSHI AMAMO
Year of Publication 16.03.2006
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Year of Publication 16.03.2006
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