A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology
Sako, Mario, Watanabe, Yoshihisa, Nakajima, Takao, Sato, Jumpei, Muraoka, Kazuyoshi, Fujiu, Masaki, Kono, Fumihiro, Nakagawa, Michio, Masuda, Masami, Kato, Koji, Terada, Yuri, Shimizu, Yuki, Honma, Mitsuaki, Imamoto, Akihiro, Araya, Tomoko, Konno, Hayato, Okanaga, Takuya, Fujimura, Tomofumi, Xiaoqing Wang, Muramoto, Mai, Kamoshida, Masahiro, Kohno, Masatoshi, Suzuki, Yoshinao, Hashiguchi, Tomoharu, Kobayashi, Tsukasa, Yamaoka, Masashi, Yamashita, Ryuji
Published in IEEE journal of solid-state circuits (01.01.2016)
Published in IEEE journal of solid-state circuits (01.01.2016)
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Journal Article
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology
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Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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Conference Proceeding
A 70 nm 16 Gb 16-Level-Cell NAND flash Memory
Shibata, N., Maejima, H., Isobe, K., Iwasa, K., Nakagawa, M., Fujiu, M., Shimizu, T., Honma, M., Hoshi, S., Kawaai, T., Kanebako, K., Yoshikawa, S., Tabata, H., Inoue, A., Takahashi, T., Shano, T., Komatsu, Y., Nagaba, K., Kosakai, M., Motohashi, N., Kanazawa, K., Imamiya, K., Nakai, H., Lasser, M., Murin, M., Meir, A., Eyal, A., Shlick, M.
Published in IEEE journal of solid-state circuits (01.04.2008)
Published in IEEE journal of solid-state circuits (01.04.2008)
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Journal Article
Conference Proceeding