A method for high selective etch of Si3N4 and SiC with ion modification and chemical removal
Kumakura, Sho, Tabata, Masahiro, Honda, Masanobu
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
A method for high selective etch of Si 3 N 4 and SiC with ion modification and chemical removal
Kumakura, Sho, Tabata, Masahiro, Honda, Masanobu
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article