Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films
Schwinge, Caroline, Hoffmann, Raik, Hertel, Johannes, Wislicenus, Marcus, Gerlich, Lukas, Völklein, Friedemann, Gerlach, Gerald, Wagner-Reetz, Maik
Published in Review of scientific instruments (01.10.2023)
Published in Review of scientific instruments (01.10.2023)
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Bistable organic electrochemical transistors: enthalpy vs. entropy
Bongartz, Lukas M., Kantelberg, Richard, Meier, Tommy, Hoffmann, Raik, Matthus, Christian, Weissbach, Anton, Cucchi, Matteo, Kleemann, Hans, Leo, Karl
Published in Nature communications (09.08.2024)
Published in Nature communications (09.08.2024)
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300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applications
Potjan, Roman, Wislicenus, Marcus, Ostien, Oliver, Hoffmann, Raik, Lederer, Maximilian, Reck, André, Emara, Jennifer, Roy, Lisa, Lilienthal-Uhlig, Benjamin, Wosnitza, J.
Published in Applied physics letters (23.10.2023)
Published in Applied physics letters (23.10.2023)
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Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)
Published in IEEE transactions on electron devices (01.11.2014)
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Journal Article
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan
Published in IEEE transactions on electron devices (01.08.2020)
Published in IEEE transactions on electron devices (01.08.2020)
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Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process
Hessler, Daniel, Olivo, Ricardo, Baldauf, Tim, Seidel, Konrad, Hoffmann, Raik, Woo, Chaiwon, Lederer, Maximilian, Raffel, Yannick
Published in Memories - Materials, Devices, Circuits and Systems (01.04.2024)
Published in Memories - Materials, Devices, Circuits and Systems (01.04.2024)
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Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles
Mart, Clemens, Kämpfe, Thomas, Hoffmann, Raik, Eßlinger, Sophia, Kirbach, Sven, Kühnel, Kati, Czernohorsky, Malte, Eng, Lukas M., Weinreich, Wenke
Published in Advanced electronic materials (01.03.2020)
Published in Advanced electronic materials (01.03.2020)
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Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, Ekaterina, Mueller, Stefan, Martin, Dominik, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas, Muller, Johannes, Paul, Jan, Hoffmann, Raik, Sundqvist, Jonas, Schlosser, Till, Boschke, Roman, van Bentum, Ralf, Trentzsch, Martin
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Sunil, Athira, Rana SK, Masud, Lederer, Maximilian, Raffel, Yannick, Müller, Franz, Olivo, Ricardo, Hoffmann, Raik, Seidel, Konrad, Kämpfe, Thomas, Chakrabarti, Bhaswar, De, Sourav
Published in Advanced intelligent systems (01.04.2024)
Published in Advanced intelligent systems (01.04.2024)
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Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage
Ali, Tarek, Kühnel, Kati, Olivo, Ricardo, Lehninger, David, Müller, Franz, Lederer, Maximilian, Rudolph, Matthias, Oehler, Sebastian, Mertens, Konstantin, Hoffmann, Raik, Zimmermann, Katrin, Schramm, Philipp, Metzger, Joachim, Binder, Robert, Czernohorsky, Malte, Kämpfe, Thomas, Seidel, Konrad, Müller, Johannes, Van Houdt, Jan, Eng, Lukas M.
Published in Electronic materials (Basel) (01.09.2021)
Published in Electronic materials (Basel) (01.09.2021)
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Journal Article
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices
Mueller, Stefan, Muller, Johannes, Hoffmann, Raik, Yurchuk, Ekaterina, Schlosser, Till, Boschke, Roman, Paul, Jan, Goldbach, Matthias, Herrmann, Tom, Zaka, Alban, Schroder, Uwe, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric \hbox
Muller, J., Boscke, T. S., Schroder, U., Hoffmann, R., Mikolajick, T., Frey, L.
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?
Seidel, Konrad, Lehninger, David, Muller, Franz, Raffel, Yannick, Sunbul, Ayse, Revello, Ricardo, De, Raik Hoffmann Sourav, Kampfe, Thomas, Lederer, Maximilian
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
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Conference Proceeding
Ferroelectric FETs with Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio
Lehninger, David, Hoffmann, Raik, Sunbul, Ayse, Mahne, Hannes, Kampfe, Thomas, Bernert, Kerstin, Thiem, Steffen, Seidel, Konrad
Published in IEEE electron device letters (01.11.2022)
Published in IEEE electron device letters (01.11.2022)
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Journal Article
Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan
Published in IEEE transactions on electron devices (01.08.2020)
Published in IEEE transactions on electron devices (01.08.2020)
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Journal Article
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices
MUELLER, Stefan, MÜLLER, Johannes, SCHRÖDER, Uwe, MIKOLAJICK, Thomas, HOFFMANN, Raik, YURCHUK, Ekaterina, SCHLÖSSER, Till, BOSCHKE, Roman, PAUL, Jan, GOLDBACH, Matthias, HERRMANN, Tom, ZAKA, Alban
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
Ali, Tarek, Mertens, Konstantin, Kühnel, Kati, Rudolph, Matthias, Oehler, Sebastian, Lehninger, David, Müller, Franz, Revello, Ricardo, Hoffmann, Raik, Zimmermann, Katrin, Kämpfe, Thomas, Czernohorsky, Malte, Seidel, Konrad, Van Houdt, Jan, Eng, Lukas M
Published in Nanotechnology (15.10.2021)
Published in Nanotechnology (15.10.2021)
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Journal Article
Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications
Sunbul, Ayse, Ali, Tarek, Mertens, Konstantin, Revello, Ricardo, Lehninger, David, Muller, Franz, Lederer, Maximilian, Kuhnel, Kati, Rudolph, Matthias, Oehler, Sebastian, Hoffmann, Raik, Zimmermann, Katrin, Biedermann, Kati, Schramm, Philipp, Czernohorsky, Malte, Seidel, Konrad, Kampfe, Thomas, Eng, Lukas M.
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Multilevel Operation of Ferroelectric FET Memory Arrays Considering Current Percolation Paths Impacting Switching Behavior
Muller, Franz, De, Sourav, Olivo, Ricardo, Lederer, Maximilian, Altawil, Abdelrahman, Hoffmann, Raik, Kampfe, Thomas, Ali, Tarek, Dunkel, Stefan, Mulaosmanovic, Halid, Muller, Johannes, Beyer, Sven, Seidel, Konrad, Gerlach, Gerald
Published in IEEE electron device letters (01.05.2023)
Published in IEEE electron device letters (01.05.2023)
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