First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor
Mhedhbi, S., Lesecq, M., Altuntas, P., Defrance, N., Okada, E., Cordier, Y., Damilano, B., Tabares-Jimenez, G., Ebongue, A., Hoel, V.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., De Jaeger, J.C., Delage, S.
Published in IEEE electron device letters (01.01.2006)
Published in IEEE electron device letters (01.01.2006)
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Journal Article
Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
Damilano, B., Lesecq, M., Zhou, D., Frayssinet, E., Chenot, S., Brault, J., Defrance, N., Ebongue, A., Cordier, Y., Hoel, V.
Published in IEEE photonics technology letters (01.09.2018)
Published in IEEE photonics technology letters (01.09.2018)
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Journal Article
High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape
Lesecq, M, Hoel, V, Lecavelier des Etangs-Levallois, A, Pichonat, E, Douvry, Y, De Jaeger, J C
Published in IEEE electron device letters (01.02.2011)
Published in IEEE electron device letters (01.02.2011)
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Journal Article
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Sánchez-Martín, H, García-Pérez, Ó, Pérez, S, Altuntas, P, Hoel, V, Rennesson, S, Cordier, Y, González, T, Mateos, J, Íñiguez-de-la-Torre, I
Published in Semiconductor science and technology (01.03.2017)
Published in Semiconductor science and technology (01.03.2017)
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Journal Article
Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
Defrance, N., Lecourt, F., Douvry, Y., Lesecq, M., Hoel, V., Lecavelier Des Etangs-Levallois, A., Cordier, Y., Ebongue, A., De Jaeger, J. C.
Published in IEEE transactions on electron devices (01.03.2013)
Published in IEEE transactions on electron devices (01.03.2013)
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Journal Article
Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics
Lecavelier des Etangs-Levallois, A., Lesecq, M., Danneville, F., Tagro, Y., Lepilliet, S., Hoel, V., Troadec, D., Gloria, D., Raynaud, C., Dubois, E.
Published in Solid-state electronics (01.12.2013)
Published in Solid-state electronics (01.12.2013)
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Journal Article
Conference Proceeding
InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
Soltani, A., BenMoussa, A., Touati, S., Hoël, V., De Jaeger, J.-C., Laureyns, J., Cordier, Y., Marhic, C., Djouadi, M.A., Dua, C.
Published in Diamond and related materials (01.02.2007)
Published in Diamond and related materials (01.02.2007)
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Journal Article
Monte Carlo simulator for the design optimization of low-noise HEMTs
Mateos, J., Gonzalez, T., Pardo, D., Hoel, V., Cappy, A.
Published in IEEE transactions on electron devices (01.10.2000)
Published in IEEE transactions on electron devices (01.10.2000)
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Journal Article
435mS/mm transconductance for AlGaN/ GaN HEMTs on HR-Si substrate with optimised gate-source spacing
BOUZID, S, MAHER, H, DEFRANCE, N, HOEL, V, LECOURT, F, RENVOISE, M, DE JAEGER, J. C, FRIJLINK, P
Published in Electronics letters (19.01.2012)
Published in Electronics letters (19.01.2012)
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Journal Article
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
LECOURT, F, KETTENISS, N, BEHMENBURG, H, DEFRANCE, N, HOEL, V, EICKELKAMP, M, VESCAN, A, GIESEN, C, HEUKEN, M, DE JAEGER, J. C
Published in Electronics letters (03.02.2011)
Published in Electronics letters (03.02.2011)
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Journal Article
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
Minko, A., Hoel, V., Morvan, E., Grimbert, B., Soltani, A., Delos, E., Ducatteau, D., Gaquiere, C., Theron, D., De Jaeger, J.C., Lahreche, H., Wedzikowski, L., Langer, R., Bove, P.
Published in IEEE electron device letters (01.07.2004)
Published in IEEE electron device letters (01.07.2004)
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Journal Article
The effect of gate length variation on InAlGaN GaN HFET device characteristics
Ketteniss, N, Behmenburg, H, Lecourt, F, Defrance, N, Hoel, V, De Jaeger, J C, Heuken, M, Kalisch, H, Vescan, A
Published in Semiconductor science and technology (01.03.2012)
Published in Semiconductor science and technology (01.03.2012)
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Journal Article
Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate
DEFRANCE, N, DOUVRY, Y, HOEL, V, GERBEDOEN, J.-C, SOLTANI, A, ROUSSEAU, M, DE JAEGER, J. C, LANGER, R, LAHRECHE, H
Published in Electronics letters (24.06.2010)
Published in Electronics letters (24.06.2010)
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Journal Article
Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs
Mateos, J, Gonzalez, T, Pardo, D, Hoel, V, Happy, H, Cappy, A
Published in IEEE transactions on electron devices (01.01.2000)
Published in IEEE transactions on electron devices (01.01.2000)
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Journal Article
High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates
Minko, A., Hoel, V., Lepilliet, S., Dambrine, G., De Jaeger, J.C., Cordier, Y., Semond, F., Natali, F., Massies, J.
Published in IEEE electron device letters (01.04.2004)
Published in IEEE electron device letters (01.04.2004)
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Journal Article
First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
Hoel, V., Defrance, N., De Jaeger, J.C., Gerard, H., Gaquiere, C., Lahreche, H., Langer, R., Wilk, A., Lijadi, M., Delage, S.
Published in Electronics letters (2008)
Published in Electronics letters (2008)
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Journal Article
AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
Boulay, S., Touati, S., Sar, A.A., Hoel, V., Gaquiere, C., De Jaeger, J.-C., Joblot, S., Cordier, Y., Semond, F., Massies, J.
Published in IEEE transactions on electron devices (01.11.2007)
Published in IEEE transactions on electron devices (01.11.2007)
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