Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
KRISHNASAMY RAJENDRAN, ORNER BRADLEY A, HODGE WADE J, JOSEPH ALVIN J, LIU QIZHI
Year of Publication 07.10.2014
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Year of Publication 07.10.2014
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SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
KRISHNASAMY RAJENDRAN, ORNER BRADLEY A, HODGE WADE J, JOSEPH ALVIN J, LIU QIZHI
Year of Publication 03.01.2013
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Year of Publication 03.01.2013
Patent
Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
KRISHNASAMY RAJENDRAN, ORNER BRADLEY A, HODGE WADE J, JOSEPH ALVIN J, LIU QIZHI
Year of Publication 30.10.2012
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Year of Publication 30.10.2012
Patent
SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
KRISHNASAMY RAJENDRAN, ORNER BRADLEY A, HODGE WADE J, JOSEPH ALVIN J, LIU QIZHI
Year of Publication 08.03.2007
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Year of Publication 08.03.2007
Patent