On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
Thei, Kong-Beng, Chuang, Hung-Ming, Yu, Kuo-Hui, Liu, Wen-Chau, Liu, Rong-Chau, Lin, Kun-Wei, Su, Chi-Wen, Ho, Chin-Shiung, Wuu, Shou-Gwo, Wang, Chung-Shu
Published in Semiconductor science and technology (01.03.2002)
Published in Semiconductor science and technology (01.03.2002)
Get full text
Journal Article