Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
Fujita, Shizuo, Oda, Masaya, Kaneko, Kentaro, Hitora, Toshimi
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique
Kaneko, Kentaro, Fujita, Shizuo, Hitora, Toshimi
Published in Japanese Journal of Applied Physics (01.02.2018)
Published in Japanese Journal of Applied Physics (01.02.2018)
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Journal Article
UV/VUV photodetectors using group III-nitride semiconductors
Saito, Terubumi, Hitora, Toshimi, Hitora, Hisako, Kawai, Hiroji, Saito, Ichiro, Yamaguchi, Eiichi
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Epitaxial growth of γ-(Al x Ga 1− x )O 3 alloy films for band-gap engineering
Oshima, Takayoshi, Kato, Yuji, Oda, Masaya, Hitora, Toshimi, Kasu, Makoto
Published in Applied physics express (01.05.2017)
Published in Applied physics express (01.05.2017)
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(Invited) Gallium Oxide Power Devices Fabricated By Novel Processes
Kaneko, Kentaro, Hitora, Toshimi, Fujita, Shizuo
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
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Journal Article
A power device material of corundum-structured α-Ga 2 O 3 fabricated by MIST EPITAXY ® technique
Kaneko, Kentaro, Fujita, Shizuo, Hitora, Toshimi
Published in Japanese Journal of Applied Physics (01.02.2018)
Published in Japanese Journal of Applied Physics (01.02.2018)
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Journal Article