Search Results - "HIRASHITA, Norio" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

by Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.
Published in IEEE transactions on electron devices (01.01.2008)

Get full text

Journal Article

$Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)$

Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

by Usuda, Koji, Numata, Toshinori, Irisawa, Toshifumi, Hirashita, Norio, Takagi, Shinichi
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)

Get full text

Journal Article

Cyanide Detection from Nickel Electrodeposited in Modified Watts Baths Including Glycine and Cyanide Production at Anodic Sides in the Baths

Cyanide Detection from Nickel Electrodeposited in Modified Watts Baths Including Glycine and Cyanide Production at Anodic Sides in the Baths

by MIZUHASHI, Shoei, ARAKAWA, Tomiyuki, WATANABE, Nobuaki, KOIKE, Shoma, URANO, Makoto, MAEJIMA, Kunimitsu, HIRASHITA, Norio, KOIWA, Ichiro
Published in Denki kagaku oyobi kōgyō butsuri kagaku (01.01.2016)

Get full text

Journal Article

Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

by Hirashita, Norio, Moriyama, Yoshihiko, Nakaharai, Shu, Irisawa, Toshifumi, Sugiyama, Naoharu, Takagi, Shin-ichi
Published in Applied physics express (01.10.2008)

Get full text

Journal Article

Measurements of Outgassing Rates in a Field of Analysis

Measurements of Outgassing Rates in a Field of Analysis

by HIRASHITA, Norio, URANO, Makoto, YOSHIDA, Hajime
Published in Journal of the Vacuum Society of Japan (2014)

Get full text

Journal Article

Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process

Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process

by Hirashita, Norio, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi
Published in Thin solid films (03.11.2008)

Get full text

Journal Article Conference Proceeding

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

by Tezuka, Tsutomu, Moriyama, Yoshihiko, Nakaharai, Shu, Sugiyama, Naoharu, Hirashita, Norio, Toyoda, Eiji, Miyamura, Yoshiji, Takagi, Shin-ichi
Published in Thin solid films (05.06.2006)

Get full text

Journal Article Conference Proceeding

Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

by Moriyama, Yoshihiko, Hirashita, Norio, Usuda, Koji, Nakaharai, Shu, Sugiyama, Naoharu, Toyoda, Eiji, Takagi, Shin-ichi
Published in Applied surface science (15.11.2009)

Get full text

Journal Article

Hydrogen Charging Methods to Low Alloy Steel Simulating Atmospheric and High Pressure Gaseous Hydrogen Environments

Hydrogen Charging Methods to Low Alloy Steel Simulating Atmospheric and High Pressure Gaseous Hydrogen Environments

by Omura, Tomohiko, Suzuki, Hiroshi, Okamura, Tsukasa, Yamada, Hiroki, Miwa, Noriaki, Watanabe, Yoshinori, Tada, Masafumi, Saito, Hiroyuki, Hayakawa, Masao, Okuma, Ryuji, Iwamoto, Takashi, Urushihara, Wataru, Hiragami, Daisuke, Imade, Masaaki, Nagasawa, Shozo, Hirashita, Norio
Published in Tetsu-to-Hagane (2014)

Get full text

Journal Article

Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

by Sugiyama, Naoharu, Numata, Toshinori, Hirashita, Norio, Irisawa, Toshifumi, Takagi, Shin-ichi
Published in Japanese Journal of Applied Physics (01.06.2008)

Get full text

Journal Article

分析分野におけるガス放出測定

分析分野におけるガス放出測定

by 平下, 紀夫, 浦野, 真理, 吉田, 肇
Published in Journal of the Vacuum Society of Japan (2014)

Get full text

Journal Article

Analyses of Stabilizer in Electroless Ni-P Films by Thermal Desorption Spectrometry (TDS)

Analyses of Stabilizer in Electroless Ni-P Films by Thermal Desorption Spectrometry (TDS)

by DEGUCHI, Kazuki, HIRASHITA, Norio, MAEJIMA, Kunimitsu, KOIWA, Ichiro
Published in Journal of The Surface Finishing Society of Japan (01.01.2011)

Get full text

Journal Article

Desorption Kinetics of Ar Implanted into Si

Desorption Kinetics of Ar Implanted into Si

by Hirashita, Norio
Published in Japanese Journal of Applied Physics (01.02.1999)

Get full text

Journal Article

Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides

Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides

by IKEDA, S, OKIHARA, M, UCHIDA, H, HIRASHITA, N
Published in Japanese Journal of Applied Physics (01.05.1997)

Get full text

Journal Article

大気および高圧水素ガス環境を模擬した低合金鋼の水素チャージ法

大気および高圧水素ガス環境を模擬した低合金鋼の水素チャージ法

by 大村, 朋彦, 鈴木, 啓史, 岡村, 司, 山田, 紘樹, 三輪, 則暁, 渡邊, 義典, 多田, 雅史, 齋藤, 博之, 早川, 正夫, 大熊, 隆次, 岩本, 隆, 漆原, 亘, 平上, 大輔, 今出, 政明, 長沢, 尚三, 平下, 紀夫
Published in 鉄と鋼 (2014)

Get full text

Journal Article

Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates

Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates

by Sugiyama, Naoharu, Tezuka, Tsutomu, Irisawa, Toshifumi, Usuda, Koji, Moriyama, Yoshihiko, Nakaharai, Shu, Hirashita, Norio, Takagi, Shin-Ichi
Published in ECS transactions (20.10.2006)

Get full text

Journal Article

STRUCTURAL STUDY OF SINGLE {111}-FACETTED CoSi2/Si INTERFACE INCORPORATED IN A SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR

STRUCTURAL STUDY OF SINGLE {111}-FACETTED CoSi2/Si INTERFACE INCORPORATED IN A SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR

by Ichimori, T, Hirashita, N
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 10A, pp. L1019-L1021. 2001 (01.10.2001)

Get full text

Journal Article

Mechanisms of surface reaction in fluorocarbon dry etching of silicon dioxide: an effect of thermal excitation

Mechanisms of surface reaction in fluorocarbon dry etching of silicon dioxide: an effect of thermal excitation

by IKEGAMI, N, OZAWA, N, MIYAKAWA, Y, HIRASHITA, N, KANAMORI, J
Published in Japanese Journal of Applied Physics (01.06.1992)

Get full text

Conference Proceeding Journal Article

Thermal desorption and infrared studies of plasma-enhanced chemical vapor deposited SiO films with tetraethylorthosilicate

Thermal desorption and infrared studies of plasma-enhanced chemical vapor deposited SiO films with tetraethylorthosilicate

by HIRASHITA, N, TOKITOH, S, UCHIDA, H
Published in Japanese Journal of Applied Physics (01.04.1993)

Get full text

Journal Article

Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures

Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures

by Okihara, Masao, Kuroda, Shigeki, Itoh, Masahiro, Norio Hirashita, Norio Hirashita
Published in Japanese Journal of Applied Physics (1995)

Get full text

Journal Article

1
2
3
4
5
6
7
8
9
Next
[9]