High-speed SOI 1/8 frequency divider using field-shield body-fixed structure
IWAMATSU, T, YAMAGUCHI, Y, UEDA, K, MASHIKO, K, INOUE, Y, HIRAO, T
Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Conference Proceeding
Journal Article
Impact of µA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
Maegawa, Shigeto, Ipposhi, Takashi, Maeda, Shigenobu, Kuriyama, Hirotada, Kohno, Yoshio, Inoue, Yasuo, Hirokazu Miyoshi, Hirokazu Miyoshi, Tadashi Hirao, Tadashi Hirao
Published in Japanese Journal of Applied Physics (01.02.1996)
Published in Japanese Journal of Applied Physics (01.02.1996)
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Journal Article
Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 µm SOI MOSFET Applications
Joachim, Hans-Oliver, Yamaguchi, Yasuo, Fujino, Takeshi, Kato, Takaaki, Yasuo Inoue, Yasuo Inoue, Tadashi Hirao, Tadashi Hirao
Published in Japanese Journal of Applied Physics (01.02.1996)
Published in Japanese Journal of Applied Physics (01.02.1996)
Get full text
Journal Article
Comparison of standard and low-dose separation-by-implanted-oxygen substrates for 0.15 μm SOI MOSFET applications
JOACHIM, H.-O, YAMAGUCHI, Y, FUJINO, T, KATO, T, INOUE, Y, HIRAO, T
Published in Japanese journal of applied physics (01.02.1996)
Published in Japanese journal of applied physics (01.02.1996)
Get full text
Conference Proceeding