Effect of fluorine implantation dose on boron thermal diffusion in silicon
El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.
Published in Journal of applied physics (15.10.2004)
Published in Journal of applied physics (15.10.2004)
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Journal Article
Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation
Mitchell, M. J., Ashburn, P., Bonar, J. M., Hemment, P. L. F.
Published in Journal of applied physics (15.04.2003)
Published in Journal of applied physics (15.04.2003)
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Journal Article
Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applications
Mitrovic, I Z, Buiu, O, Hall, S, Zhang, J, Wang, Y, Hemment, P L F, El Mubarek, H A W, Ashburn, P
Published in Semiconductor science and technology (01.01.2005)
Published in Semiconductor science and technology (01.01.2005)
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Journal Article
Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R., Ashburn, P.
Published in Solid-state electronics (01.04.2005)
Published in Solid-state electronics (01.04.2005)
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Journal Article
Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface
FREY, L, STOEMENOS, J, SCHORK, R, NEJIM, A, HEMMENT, P. L. F
Published in Journal of the Electrochemical Society (01.12.1997)
Published in Journal of the Electrochemical Society (01.12.1997)
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Journal Article
Kinetics of wet oxidation at 1000 °C of Si0.5Ge0.5 relaxed alloy
Zhang, J P, Hemment, P L F, Parker, E H C
Published in Semiconductor science and technology (01.05.1999)
Published in Semiconductor science and technology (01.05.1999)
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Journal Article
Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys
Cristiano, F, Nejim, A, Suprun-Belevich, Yu, Claverie, A, Hemment, P.L.F
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1999)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1999)
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Journal Article
Recombination processes in erbium-doped MBE silicon
Efeoglu, H, Evans, J H, Jackman, T E, Hamilton, B, Houghton, D C, Langer, J M, Peaker, A R, Perovic, D, Poole, I, Ravel, N, Hemment, P, Chan, C W
Published in Semiconductor science and technology (01.02.1993)
Published in Semiconductor science and technology (01.02.1993)
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Journal Article
Non-selective growth of SiGe heterojunction bipolar trasistor[transistor] layers at 700°C with dual control of n- and p-type dopant profiles
EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, P, WANG, Y, HEMMENT, P, BUIU, O, HALL, S
Published in Journal of materials science. Materials in electronics (01.05.2003)
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Conference Proceeding
Journal Article
Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy
SIAPKAS, D. I, HATZOPOULOS, N, KATSIDIS, C. C, ZORBA, T, MITSAS, C. L, HEMMENT, P. L. F
Published in Journal of the Electrochemical Society (01.09.1996)
Published in Journal of the Electrochemical Society (01.09.1996)
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Journal Article
Analysis of thin-film silicon-on-insulator structures formed by low-energy oxygen ion implantation
LI, Y, KILNER, J. A, ROBINSON, A. K, HEMMENT, P. L. F, MARSH, C. D
Published in Journal of applied physics (01.10.1991)
Published in Journal of applied physics (01.10.1991)
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Journal Article
Formation and characterization of Si/SiO2 multilayer structures by oxygen ion implantation into silicon
Hatzopoulos, N., Siapkas, D. I., Hemment, P. L. F., Skorupa, W.
Published in Journal of applied physics (01.11.1996)
Published in Journal of applied physics (01.11.1996)
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Journal Article
MeV ion implantation induced damage in relaxed Si1−xGex
Nylandsted Larsen, A., O’Raifeartaigh, C., Barklie, R. C., Holm, B., Priolo, F., Franzo, G., Lulli, G., Bianconi, M., Nipoti, R., Lindner, J. K. N., Mesli, A., Grob, J. J., Cristiano, F., Hemment, P. L. F.
Published in Journal of applied physics (01.03.1997)
Published in Journal of applied physics (01.03.1997)
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Journal Article