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Published in Japanese Journal of Applied Physics (01.01.2005)
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High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
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Published in Japanese Journal of Applied Physics (01.09.2004)
Published in Japanese Journal of Applied Physics (01.09.2004)
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Formation of single-crystal Al interconnection by in situ annealing
WADA, J.-I, SUGURO, K, HAYASAKA, N, OKANO, H
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.06.1993)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.06.1993)
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Conference Proceeding
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Ab initio molecular orbital study of water absorption and hydrolysis of chemical vapor deposited SiOF films I
NAKASAKI, Y, MIYAJIMA, I, KATSUMATA, R, HAYASAKA, N
Published in Japanese Journal of Applied Physics (1997)
Published in Japanese Journal of Applied Physics (1997)
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Conference Proceeding
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Ab initio molecular orbital study of water absorption and hydrolysis of chemical vapor deposited SiOF films II
NAKASAKI, Y, MIYAJIMA, H, KATSUMATA, R, HAYASAKA, N
Published in Japanese Journal of Applied Physics (1997)
Published in Japanese Journal of Applied Physics (1997)
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Conference Proceeding
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Published in 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)
(01.11.2016)
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Conference Proceeding
Mechanism of corrosion in Al-Si-Cu
HAYASAKA, N, KOGA, Y, SHIMOMURA, K, YOSHIDA, Y, OKANO, H
Published in Japanese Journal of Applied Physics (01.07.1991)
Published in Japanese Journal of Applied Physics (01.07.1991)
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In situ transmission electron microscopy observation of single crystallization of filled aluminum interconnection
WADA, J.-I, TOYODA, H, KANEKO, H, HAYASAKA, N, YASUDA, H, MORI, H, OKANO, H
Published in Japanese Journal of Applied Physics (01.10.1995)
Published in Japanese Journal of Applied Physics (01.10.1995)
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Radiation damage evaluation in excimer laser beam irradiation and reactive ion etching
SEKINE, M, OKANO, H, YAMABE, K, HAYASAKA, N, HORIIKE, Y
Published in Japanese Journal of Applied Physics (01.07.1986)
Published in Japanese Journal of Applied Physics (01.07.1986)
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SEMICONDUCTOR DEVICE WITH SURFACE TREATED METAL LINE AND METHOD OF MANUFACTURING THE SAME
IKEGAMI HIROSHI, YODA TAKASHI, HAYASAKA NOBUO, NAKATA REMPEI, HISATSUNE YOSHIMI
Year of Publication 05.06.2004
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Year of Publication 05.06.2004
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
KURASHIMA NOBUYUKI, HAYASAKA NOBUO, MIYAJIMA HIDESHI, YAMADA NOBUHIDE
Year of Publication 03.04.2002
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Year of Publication 03.04.2002
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
HAYASAKA NOBUO, IKEGAMI HIROSHI, YODA TAKASHI, NAKATA REMPEI, HISATSUNE YOSHIMI
Year of Publication 13.03.2002
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Year of Publication 13.03.2002
Patent