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Laufer, Stefan A, Hauser, Dominik R. J, Domeyer, David M, Kinkel, Katrin, Liedtke, Andy J
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Published in Journal of medicinal chemistry (24.07.2008)
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A simple parameter extraction method for ultra-thin oxide MOSFETs
McLarty, P.K, Cristoloveanu, S, Faynot, O, Misra, V, Hauser, J.R, Wortman, J.J
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Published in Solid-state electronics (1995)
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Relationships among government payments, crop insurance payments and crop revenue
Hauser, R.J, Sherrick, B.J, Schnitkey, G.D
Published in European review of agricultural economics (01.09.2004)
Published in European review of agricultural economics (01.09.2004)
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Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Henson, W.K., Ahmed, K.Z., Vogel, E.M., Hauser, J.R., Wortman, J.J., Venables, R.D., Xu, M., Venables, D.
Published in IEEE electron device letters (01.04.1999)
Published in IEEE electron device letters (01.04.1999)
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Synthesis and Biological Testing of N-Aminoimidazole-Based p38α MAP Kinase Inhibitors
Bracht, Claudia, Hauser, Dominik R. J., Schattel, Verena, Albrecht, Wolfgang, Laufer, Stefan A.
Published in ChemMedChem (05.07.2010)
Published in ChemMedChem (05.07.2010)
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Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., Lee, S. J., Lee, C.-H., Luo, Z. J., Zhu, W., Hauser, J. R., Kwong, D.-L., Lucovsky, G., Ma, T. P., Ozturk, M. C.
Published in IBM journal of research and development (01.03.2002)
Published in IBM journal of research and development (01.03.2002)
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Energy bandgap and lattice constant contours of iii–v quaternary alloys
Glisson, T. H., Hauser, J. R., Littlejohn, M. A., Williams, C. K.
Published in Journal of electronic materials (01.01.1978)
Published in Journal of electronic materials (01.01.1978)
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Conductivity of ion implanted and rapid thermal annealed semi-insulating polycrystalline silicon
OZGUZ, V. H, WORTMAN, J. J, HAUSER, J. R, LITTLEJOHN, M. A, ROZGONYI, G. A, CURRAN, P
Published in Journal of the Electrochemical Society (01.03.1988)
Published in Journal of the Electrochemical Society (01.03.1988)
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Conference Proceeding
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Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling
SHANWARE, A, MASSOUD, H. Z, VOGEL, E, HENSON, K, HAUSER, J. R, WORTMAN, J. J
Published in Microelectronic engineering (01.09.1999)
Published in Microelectronic engineering (01.09.1999)
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Conference Proceeding
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition
Vogel, E.M., Hill, W.L., Misra, V., McLarty, P.K., Wortman, J.J., Hauser, J.R., Morfouli, P., Ghibaudo, G., Ouisse, T.
Published in IEEE transactions on electron devices (01.05.1996)
Published in IEEE transactions on electron devices (01.05.1996)
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