EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in IEEE transactions on electron devices (01.02.2012)
Published in IEEE transactions on electron devices (01.02.2012)
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Journal Article
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
Suwa, Tomoyuki, Teramoto, Akinobu, Kumagai, Yuki, Abe, Kenichi, Li, Xiang, Nakao, Yukihisa, Yamamoto, Masashi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro, Hattori, Takeo
Published in Japanese Journal of Applied Physics (01.03.2013)
Published in Japanese Journal of Applied Physics (01.03.2013)
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Journal Article
Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface
Suwa, Tomoyuki, Teramoto, Akinobu, Nagata, Kohki, Ogura, Atsushi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro, Hattori, Takeo
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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Journal Article
Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal
Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm
Kouda, Miyuki, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Jpn J Appl Phys (01.10.2011)
Published in Jpn J Appl Phys (01.10.2011)
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Journal Article
Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer
Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2011)
Published in Japanese Journal of Applied Physics (01.10.2011)
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Journal Article
Network structure of B2O3-PbO and B2O3-PbO-PbBr2 glasses analyzed by pulsed neutron diffraction and Raman spectroscopy
USHIDA, Hideharu, IWADATE, Yasuhiko, JITSUKAWA, Shiro, HATTORI, Takeo, NISHIYAMA, Shin, FUKUSHIMA, Kazuko, IKEDA, Yasuhisa, YAMAGUCHI, Makoto, MISAWA, Masakatsu, FUKUNAGA, Toshiharu, NAKAZAWA, Tetsuya
Published in Journal of alloys and compounds (08.09.2004)
Published in Journal of alloys and compounds (08.09.2004)
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Journal Article
Erratum: "Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species"
Suwa, Tomoyuki, Teramoto, Akinobu, Kumagai, Yuki, Abe, Kenichi, Li, Xiang, Nakao, Yukihisa, Yamamoto, Masashi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro, Hattori, Takeo
Published in Japanese Journal of Applied Physics (25.06.2013)
Published in Japanese Journal of Applied Physics (25.06.2013)
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Journal Article
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
Wu, Yan, Dou, Chunmeng, Wei, Feng, Kakushima, Kuniyuki, Ohmori, Kenji, Ahmet, Parhat, Watanabe, Takanobu, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Yamada, Keisaku, Kataoka, Yoshinori, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states
Kimura, Kenji, Nakajima, Kaoru, Zhao, Ming, Nohira, Hiroshi, Hattori, Takeo, Kobata, Masaaki, Ikenaga, Eiji, Kim, Jung Jin, Kobayashi, Keisuke, Conard, Thierry, Vandervorst, Wilfried
Published in Surface and interface analysis (01.03.2008)
Published in Surface and interface analysis (01.03.2008)
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Journal Article
Conference Proceeding
Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer
Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2011)
Published in Japanese Journal of Applied Physics (01.10.2011)
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Journal Article
Annealing Reaction for Ni Silicidation of Si Nanowire
Arai, Hideaki, Kamimura, Hideyuki, Sato, Soshi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in ECS transactions (25.09.2009)
Published in ECS transactions (25.09.2009)
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Journal Article
Mesoscopic-Scale and Small Strain Field beneath SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon — Depth of the Strain Field
Yashiro, Wataru, Yoda, Yoshitaka, Takahashi, Toshio, Teramoto, Akinobu, Hattori, Takeo, Miki, Kazushi
Published in E-journal of surface science and nanotechnology (01.01.2011)
Published in E-journal of surface science and nanotechnology (01.01.2011)
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Journal Article
Effects of N[sub 2]-Based Annealing on the Reliability Characteristics of Tungsten/La[sub 2]O[sub 3]/Silicon Capacitors
Molina, Joel, Tachi, Kiichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi
Published in Journal of the Electrochemical Society (2007)
Published in Journal of the Electrochemical Society (2007)
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Journal Article
Effect of Oxygen for Ultra-Thin La2O3 Film Deposition
Tachi, Kiichi, Iwai, H., Hattori, Takeo, Sugii, Nobuyuki, Tsutsui, Kazuo, Ahemt, Parhat, Kakushima, Kuniyuki
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate
Yamanaka, Junji, Sawano, Kentaro, Suzuki, Kumiko, Nakagawa, Kiyokazu, Ozawa, Yusuke, Hattori, Takeo, Shiraki, Yasuhiro
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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Conference Proceeding