Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions
Safranski, Christopher, Kaiser, Jan, Trouilloud, Philip, Hashemi, Pouya, Hu, Guohan, Sun, Jonathan Z
Published in Nano letters (10.03.2021)
Published in Nano letters (10.03.2021)
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Journal Article
Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
Deshpande, Veeresh, Djara, Vladimir, O Connor, Eamon, Hashemi, Pouya, Morf, Thomas, Balakrishnan, Karthik, Caimi, Daniele, Sousa, Marilyne, Fompeyrine, Jean, Czornomaz, Lukas
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
Hashemi, Pouya, Balakrishnan, Karthik, Ott, John A., Leobandung, Effendi, Mo, Renee T., Park, Dae-Gyu
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Published in AIP advances (01.05.2013)
Published in AIP advances (01.05.2013)
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Journal Article
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment
Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
Hashemi, Pouya, Ando, Takashi, Cartier, Eduard A., Kam-Leung Lee, Bruley, John, Choong-Hyun Lee, Narayanan, Vijay
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Corrigendum to “Thin-film Si1−xGex HIT solar cells” [Solar Energy 103 (2014) 154–159]
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Published in Solar energy (01.09.2017)
Published in Solar energy (01.09.2017)
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Journal Article
Corrigendum to “Thin-film Si^sub 1-x^Ge^sub x^ HIT solar cells” [Solar Energy 103 (2014) 154–159]
Hadi, Sabina Abdul, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L
Published in Solar energy (01.09.2017)
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Published in Solar energy (01.09.2017)
Journal Article
Thin-film Si1−xGex HIT solar cells
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Published in Solar energy (01.05.2014)
Published in Solar energy (01.05.2014)
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Journal Article
Nouveautés dans la prise en charge des céphalées
Della Vedova, Ludovico, Hashemi, Pouya, Meynard-Colomb, Anne, Kleinschmidt, Andreas, Arsever, Sara
Published in Revue médicale suisse (2022)
Published in Revue médicale suisse (2022)
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Journal Article
High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment
Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content
Hashemi, Pouya, Ando, Takashi, Cartier, Eduard A., Bruley, John, Lee, Choong-Hyun, Narayanan, Vijay
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article