Search Results - "HASHEMI POUYA" :: K.UTB vyhledávací portál

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VERTICALLY STACKED NFET AND PFET WITH DUAL WORK FUNCTION

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 02.01.2020

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Nanowire transistor structures with merged source/drain regions using auxiliary pillars

by Reznicek Alexander, Hashemi Pouya, Khakifirooz Ali
Year of Publication 13.03.2018

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Vertical transistor pass gate device

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 31.12.2019

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FIN-FELDEFFEKTTRANSISTOREN MIT VERTIKALEM TRANSPORT KOMBINIERT MIT RESISTIVEN SPEICHERSTRUKTUREN IN EINER KREUZSCHIENEN-ANORDNUNG UND VERFAHREN ZUR HERSTELLUNG

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Lee, Choonghyun, Ando, Takashi
Year of Publication 26.09.2024

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VERTICALLY STACKED NFET AND PFET WITH DUAL WORK FUNCTION

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 26.12.2019

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FORMATION OF SELF-LIMITED INNER SPACER FOR GATE-ALL-AROUND NANOSHEET FET

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 26.12.2019

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FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

by Narayanan, Vijay, Jagannathan, Hemanth, Lee, ChoongHyun, Hashemi, Pouya, Ando, Takashi
Year of Publication 05.12.2019

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INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

by Sun, Jonathan Zanhong, Doris, Bruce B, Nowak, Janusz Jozef, Hashemi, Pouya
Year of Publication 16.09.2021

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Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions

by Hashemi, Pouya, Ando, Takashi, Lee, Choonghyun, Bao, Ruqiang
Year of Publication 26.11.2019

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VERY NARROW ASPECT RATIO TRAPPING TRENCH STRUCTURE WITH SMOOTH TRENCH SIDEWALLS

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 21.11.2019

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SINGLE CRYSTALLINE EXTRINSIC BASES FOR BIPOLAR JUNCTION STRUCTURES

by REZNICEK, Alexander, NING, Tak, HASHEMI, Pouya, YAU, Jeng-Bang
Year of Publication 21.11.2019

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Single crystalline extrinsic bases for bipolar junction structures

by Yau, Jeng-Bang, Reznicek, Alexander, Hashemi, Pouya, Ning, Tak
Year of Publication 19.11.2019

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MULTIPLE WORK FUNCTION NANOSHEET FIELD-EFFECT TRANSISTORS WITH DIFFERENTIAL INTERFACIAL LAYER THICKNESS

by Lee, ChoongHyun, Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi
Year of Publication 14.11.2019

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FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Khakifirooz, Ali
Year of Publication 07.11.2019

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MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS

by LEE, CHOONGHYUN, HASHEMI, POUYA, ZHANG, JINGYUN, ANDO, TAKASHI
Year of Publication 07.11.2019

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Formation of strained fins in a finFET device

by Reznicek Alexander, Hashemi Pouya, Khakifirooz Ali
Year of Publication 09.01.2018

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III-V lateral bipolar junction transistor

by Reznicek Alexander, Hashemi Pouya, Ning Tak H
Year of Publication 09.01.2018

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Field-effect transistor with aggressively strained fins

by Reznicek Alexander, Hashemi Pouya, Khakifirooz Ali
Year of Publication 02.01.2018

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Vertical FET with Differential Top Spacer

by Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 24.10.2019

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FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Khakifirooz, Ali
Year of Publication 24.10.2019

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