Search Results - "HASHEMI POUYA" :: K.UTB vyhledávací portál

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REDUCTION OF DRAIN LEAKAGE IN NANOSHEET DEVICE

by Xie, Ruilong, Reznicek, Alexander, Hashemi, Pouya, Ando, Takashi
Year of Publication 15.07.2021

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VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS HAVING GERMANIUM CHANNEL SURFACES

by Hashemi, Pouya, Lee, Choonghyun, Ando, Takashi
Year of Publication 10.10.2019

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NANOSHEET WITH BURIED GATE CONTACT

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Lee, Choonghyun, Ando, Takashi
Year of Publication 01.07.2021

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Magnetic Tunnel Junction Having All-Around Structure

by Sun, Jonathan Z, Jabeur, Kotb, Worledge, Daniel, Hashemi, Pouya
Year of Publication 24.06.2021

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MAGNETIC TUNNEL JUNCTION HAVING ALL-AROUND STRUCTURE

by SUN, Jonathan, WORLEDGE, Daniel, JABEUR, Kotb, HASHEMI, Pouya
Year of Publication 24.06.2021

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SELF-ALIGNED EDGE PASSIVATION FOR ROBUST RESISTIVE RANDOM ACCESS MEMORY CONNECTION

by XIE, Ruilong, REZNICEK, Alexander, ANDO, Takashi, HASHEMI, Pouya
Year of Publication 24.06.2021

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Self-Aligned Edge Passivation For Robust Resistive Random Access Memory Connection

by Xie, Ruilong, Reznicek, Alexander, Hashemi, Pouya, Ando, Takashi
Year of Publication 24.06.2021

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Fabrication of vertical fin transistor with multiple threshold voltages

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 22.06.2021

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COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE HAVING FIN FIELD EFFECT TRANSISTORS WITH A COMMON METAL GATE

by Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 17.06.2021

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Threshold voltage adjustment by inner spacer material selection

by Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 15.06.2021

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Stacked resistive memory with individual switch control

by Reznicek, Alexander, Hashemi, Pouya, Zhang, Jingyun, Ando, Takashi, Lee, Choonghyun
Year of Publication 15.06.2021

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MULTIPLE WORK FUNCTION NANOSHEET FIELD EFFECT TRANSISTOR USING SACRIFICIAL SILICON GERMANIUM GROWTH

by Hashemi, Pouya, Ando, Takashi, Lee, Choonghyun
Year of Publication 12.09.2019

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Field effect transistors including contoured channels and planar channels

by BASU ANIRBAN, HASHEMI POUYA
Year of Publication 16.02.2016

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Fabrication of vertical fin transistor with multiple threshold voltages

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 25.05.2021

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MAGNETIC RANDOM ACCESS MEMORY (MRAM) STRUCTURE WITH SMALL BOTTOM ELECTRODE

by Marchack, Nathan P, Hashemi, Pouya, Doris, Bruce B., Kothandaraman, Chandrasekharan
Year of Publication 20.05.2021

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DIODE CONNECTED VERTICAL TRANSISTOR

by Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 22.08.2019

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Single crystalline extrinsic bases for bipolar junction structures

by Yau, Jeng-Bang, Reznicek, Alexander, Hashemi, Pouya, Ning, Tak
Year of Publication 04.05.2021

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Enhanced field bipolar resistive RAM integrated with FDSOI technology

by Reznicek, Alexander, Hashemi, Pouya, Ando, Takashi
Year of Publication 06.08.2019

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FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION OF GATE INDUCED DRAIN LEAKAGE

by Xie, Ruilong, Reznicek, Alexander, Hashemi, Pouya, Ando, Takashi
Year of Publication 29.04.2021

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Fabrication of vertical fin transistor with multiple threshold voltages

by Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya, Balakrishnan, Karthik
Year of Publication 27.04.2021

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