Resistance-based memory having two-diode access device
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Year of Publication 29.12.2015
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Year of Publication 29.12.2015
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GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
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Year of Publication 02.01.2019
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Year of Publication 02.01.2019
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WRITE ENERGY CONSERVATION IN MEMORY
KIM, TAEHYUN, KIM, JUNG PILL, ZHU, XIAOCHUN, LEE, KANGHO, RAO, HARI M, HAO, WUYANG
Year of Publication 01.04.2015
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Year of Publication 01.04.2015
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RESISTANCE-BASED MEMORY HAVING TWO-DIODE ACCESS DEVICE
KIM TAEHYUN, SUH JUNGWON, LEE KANGHO, KIM JUNG PILL, HAO WUYANG, KANG SEUNG HYUK
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Year of Publication 01.05.2014
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Resistance based memory having two-diode access device
SUH JUNGWON, LEE KANGHO, KIM TAE HYUN, KIM JUNG PILL, HAO WUYANG, KANG SEUNG H
Year of Publication 28.01.2014
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Year of Publication 28.01.2014
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RESISTANCE-BASED MEMORY HAVING TWO-DIODE ACCESS DEVICE
SUH, JUNGWON, KIM, TAE HYUN, KIM, JUNG PILL, LEE, KANGHO, KANG, SEUNG H, HAO, WUYANG
Year of Publication 07.08.2013
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Year of Publication 07.08.2013
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Write energy conservation in memory
KIM TAEHYUN, LEE KANGHO, KIM JUNG PILL, RAO HARI M, ZHU XIAOCHUN, HAO WUYANG
Year of Publication 16.07.2013
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Year of Publication 16.07.2013
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WRITE ENERGY CONSERVATION IN MEMORY
KIM, TAEHYUN, KIM, JUNG PILL, ZHU, XIAOCHUN, LEE, KANGHO, RAO, HARI M, HAO, WUYANG
Year of Publication 20.03.2013
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Year of Publication 20.03.2013
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A 45nm 1Mb embedded STT-MRAM with design techniques to minimize read-disturbance
Kim, J. P., Taehyun Kim, Wuyang Hao, Rao, H. M., Kangho Lee, Xiaochun Zhu, Xia Li, Wah Hsu, Kang, S. H., Matt, N., Yu, N.
Published in 2011 Symposium on VLSI Circuits - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Circuits - Digest of Technical Papers (01.06.2011)
Conference Proceeding
geração de um estado não-reversível em uma célula de bit que possui uma primeira junção de túnel magnética e uma segunda junção de túnel magnética
MATTHEW MICHAEL NOWAK, XIAOCHUN ZHU, JUNGWON SUH, JUNG PILL KIM, NICHOLAS K. YU, WUYANG HAO, STEVEN M.MILLENDORF, XIA LI, ASAF ASHKENAZI, HARI M.RAO, TAE HYUN KIM, SEUNG H.KANG, WAH NAM HSU, KANGHO LEE
Year of Publication 31.05.2016
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Year of Publication 31.05.2016
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RESISTANCE-BASED MEMORY HAVING TWO-DIODE ACCESS DEVICE
SUH, JUNGWON, KIM, TAE HYUN, KIM, JUNG PILL, LEE, KANGHO, KANG, SEUNG H, HAO, WUYANG
Year of Publication 05.04.2012
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Year of Publication 05.04.2012
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geração de estado não reversível em uma célula de bits que possui uma primeira junção túnel magnética e uma segunda junção túnel magnética
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Year of Publication 22.12.2020
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Year of Publication 22.12.2020
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Write Energy Conservation In Memory
KIM TAEHYUN, LEE KANGHO, KIM JUNG PILL, RAO HARI M, ZHU XIAOCHUN, HAO WUYANG
Year of Publication 17.11.2011
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Year of Publication 17.11.2011
Patent
WRITE ENERGY CONSERVATION IN MEMORY
KIM, TAEHYUN, KIM, JUNG PILL, ZHU, XIAOCHUN, LEE, KANGHO, RAO, HARI M, HAO, WUYANG
Year of Publication 17.11.2011
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Year of Publication 17.11.2011
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GENERATING A NON REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
SUH JUNGWON, LEE KANGHO, MILLENDORF STEVEN M, KIM JUNG PILL, YU NICHOLAS K, RAO HARI M, ZHU XIAOCHUN, HAO WUYANG, KANG SEUNG H, LI XIA, HSU WAH NAM, NOWAK MATTHEW MICHAEL, KIM TAE HYUN, ASHKENAZI ASAF
Year of Publication 29.05.2015
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Year of Publication 29.05.2015
Patent
GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
KIM, TAE HYUN, SUH, JUNGWON, YU, NICHOLAS K, LI, XIA, ZHU, XIAOCHUN, LEE, KANGHO, MILLENDORF, STEVEN M, KANG, SEUNG H, HSU, WAH NAM, RAO, HARI M, HAO, WUYANG, KIM, JUNG PILL, ASHKENAZI, ASAF, NOWAK, MATTHEW MICHAEL
Year of Publication 16.12.2014
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Year of Publication 16.12.2014
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