Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials
Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Liu, Ming
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2017)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2017)
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Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming
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Published in Nature communications (13.12.2021)
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Luo, Qing, Cheng, Yan, Yang, Jianguo, Cao, Rongrong, Ma, Haili, Yang, Yang, Huang, Rong, Wei, Wei, Zheng, Yonghui, Gong, Tiancheng, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Yu, Haoran, Shang, Dashan, Liu, Qi, Yu, Bing, Ren, Qiwei, Lv, Hangbing, Liu, Ming
Published in Nature communications (13.03.2020)
Published in Nature communications (13.03.2020)
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Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming
Published in Advanced materials (Weinheim) (01.12.2016)
Published in Advanced materials (Weinheim) (01.12.2016)
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Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
Cao, Rongrong, Wang, Yan, Zhao, Shengjie, Yang, Yang, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Lv, Hangbing, Liu, Qi, Liu, Ming
Published in IEEE electron device letters (01.08.2018)
Published in IEEE electron device letters (01.08.2018)
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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming
Published in Advanced functional materials (01.09.2014)
Published in Advanced functional materials (01.09.2014)
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Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
Liu, Qi, Sun, Jun, Lv, Hangbing, Long, Shibing, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming
Published in Advanced materials (Weinheim) (10.04.2012)
Published in Advanced materials (Weinheim) (10.04.2012)
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Oxide‐Based Electrolyte‐Gated Transistors for Spatiotemporal Information Processing
Li, Yue, Lu, Jikai, Shang, Dashan, Liu, Qi, Wu, Shuyu, Wu, Zuheng, Zhang, Xumeng, Yang, Jianguo, Wang, Zhongrui, Lv, Hangbing, Liu, Ming
Published in Advanced materials (Weinheim) (01.11.2020)
Published in Advanced materials (Weinheim) (01.11.2020)
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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Liu, Qi, Long, Shibing, Lv, Hangbing, Wang, Wei, Niu, Jiebin, Huo, Zongliang, Chen, Junning, Liu, Ming
Published in ACS nano (26.10.2010)
Published in ACS nano (26.10.2010)
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Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
Cao, Rongrong, Liu, Qi, Liu, Ming, Song, Bing, Shang, Dashan, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing
Published in IEEE electron device letters (01.11.2019)
Published in IEEE electron device letters (01.11.2019)
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Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor
Zhang, Xumeng, Liu, Sen, Zhao, Xiaolong, Wu, Facai, Wu, Quantan, Wang, Wei, Cao, Rongrong, Fang, Yilin, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming
Published in IEEE electron device letters (01.09.2017)
Published in IEEE electron device letters (01.09.2017)
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Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2017)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2017)
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Wake‐Up Effect in HfO2‐Based Ferroelectric Films
Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing
Published in Advanced electronic materials (01.01.2021)
Published in Advanced electronic materials (01.01.2021)
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Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming
Published in Nature communications (20.08.2014)
Published in Nature communications (20.08.2014)
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Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
Luo, Qing, Zhang, Xumeng, Hu, Yuan, Gong, Tiancheng, Xu, Xiaoxin, Yuan, Peng, Ma, Haili, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming
Published in IEEE electron device letters (01.05.2018)
Published in IEEE electron device letters (01.05.2018)
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Recommended Methods to Study Resistive Switching Devices
Lanza, Mario, Wong, H.‐S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Puglisi, Francesco M., Kang, Jinfeng, Magyari‐Köpe, Blanka, Yalon, Eilam, Kenyon, Anthony, Buckwell, Mark, Mehonic, Adnan, Shluger, Alexander, Li, Haitong, Hou, Tuo‐Hung, Hudec, Boris, Akinwande, Deji, Ge, Ruijing, Ambrogio, Stefano, Roldan, Juan B., Miranda, Enrique, Suñe, Jordi, Pey, Kin Leong, Wu, Xing, Raghavan, Nagarajan, Wu, Ernest, Lu, Wei D., Navarro, Gabriele, Zhang, Weidong, Wu, Huaqiang, Li, Runwei, Holleitner, Alexander, Wurstbauer, Ursula, Lemme, Max C., Liu, Ming, Long, Shibing, Liu, Qi, Lv, Hangbing, Padovani, Andrea, Pavan, Paolo, Valov, Ilia, Jing, Xu, Han, Tingting, Zhu, Kaichen, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan
Published in Advanced electronic materials (01.01.2019)
Published in Advanced electronic materials (01.01.2019)
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Conductance Quantization in Resistive Random Access Memory
Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming
Published in Nanoscale Research Letters (01.12.2015)
Published in Nanoscale Research Letters (01.12.2015)
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Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM
Banerjee, Writam, Cai, Wu Fa, Zhao, Xiaolong, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming
Published in Nanoscale (21.12.2017)
Published in Nanoscale (21.12.2017)
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Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging
Qin, Yuan, Long, Shibing, He, Qiming, Dong, Hang, Jian, Guangzhong, Zhang, Ying, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Lu, Yingjie, Shan, Chongxin, Wang, Jianlu, Hu, Weida, Lv, Hangbing, Liu, Qi, Liu, Ming
Published in Advanced electronic materials (01.07.2019)
Published in Advanced electronic materials (01.07.2019)
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