Analysis of neutron-induced single-event burnout in SiC power MOSFETs
Shoji, Tomoyuki, Nishida, Shuichi, Hamada, Kimimori, Tadano, Hiroshi
Published in Microelectronics and reliability (01.08.2015)
Published in Microelectronics and reliability (01.08.2015)
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Journal Article
Extension of stacking faults in 4H-SiC pn diodes under a high current pulse stress
Iwahashi, Yohei, Miyazato, Masaki, Miyajima, Masaaki, Yonezawa, Yoshiyuki, Kato, Tomohisa, Fujiwara, Hirokazu, Hamada, Kimimori, Otsuki, Akihiro, Okumura, Hajime
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices
Shoji, Tomoyuki, Nishida, Shuichi, Hamada, Kimimori
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation
Ohmine, Toshimitsu, Deshpande, Vaibhav, Takada, Hideki, Ikeda, Tomoharu, Saito, Hirokazu, Kawai, Fumiaki, Hamada, Kimimori
Published in Japanese Journal of Applied Physics (01.08.2011)
Published in Japanese Journal of Applied Physics (01.08.2011)
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Journal Article
Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation
Ohmine, Toshimitsu, Deshpande, Vaibhav, Takada, Hideki, Ikeda, Tomoharu, Saito, Hirokazu, Kawai, Fumiaki, Hamada, Kimimori
Published in Japanese Journal of Applied Physics (01.08.2011)
Published in Japanese Journal of Applied Physics (01.08.2011)
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Journal Article
Message from the General Chair
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
(30.05.2021)
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Conference Proceeding
Investigation of correlation between device structures and switching losses of IGBTs
Machida, S., Sugiyama, T., Ishiko, M., Yasuda, S., Saito, J., Hamada, K.
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
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Conference Proceeding
Cosmic ray neutron-induced single-event burnout in power devices
Shoji, Tomoyuki, Nishida, Shuichi, Hamada, Kimimori, Tadano, Hiroshi
Published in IET power electronics (01.12.2015)
Published in IET power electronics (01.12.2015)
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Journal Article
A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage
Rahman, Md Tasbir, Kimura, Keisuke, Fukami, Takeshi, Konishi, Masaki, Nishiwaki, Tsuyoshi, Saito, Jun, Hamada, Kimimori
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Message from the general chair
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
(01.05.2017)
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Conference Proceeding
Erratum: "Triggering Mechanism for Neutron Induced Single Event Burnout in Power Devices"
Shoji, Tomoyuki, Nishida, Shuichi, Hamada, Kimimori
Published in Japanese Journal of Applied Physics (25.12.2013)
Published in Japanese Journal of Applied Physics (25.12.2013)
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Journal Article