High-density oxidized porous silicon
Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Semiconductor science and technology (01.10.2012)
Published in Semiconductor science and technology (01.10.2012)
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Journal Article
Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling
Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Physica status solidi. C (01.03.2011)
Published in Physica status solidi. C (01.03.2011)
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Journal Article
A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
Maitrejean, Sylvain, Loubet, Nicolas, Augendre, Emmanuel, Morin, Pierre Francois, Reboh, Shay, Bernier, Nicolas, Wacquez, Romain, Lherron, Benoit, Bonnevialle, Aurore, Liu, Qing, Hartmann, Jean-Michel, He, Hong, Halimaoui, Aomar, Li, Juntao, Pilorget, Sonia, Kanyandekwe, Joel, Grenouillet, Laurent, Chafik, Fadoua, Morand, Yves, Le Royer, Cyrille, Faynot, Oliver, Celik, Muhsin, Doris, Bruce, de Salvo, Barbara
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Study of silicon–germanium interdiffusion from pure germanium deposited layers
Gavelle, Mathieu, Bazizi, El Mehdi, Scheid, Emmanuel, Armand, Claude, Fazzini, Pier Francesco, Marcelot, Olivier, Campidelli, Yves, Halimaoui, Aomar, Cristiano, Fuccio
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
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Journal Article
Electrically conductive element
Dubarry, Christophe, Rodriguez, Guillaume, Halimaoui, Aomar, Tessaire, Magali
Year of Publication 05.09.2023
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Year of Publication 05.09.2023
Patent
Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process
Breil, N., Dubois, E., Halimaoui, A., Pouydebasque, A., Laszcz, A., Ratajcak, J., Larrieu, G., Skotnicki, T.
Published in IEEE electron device letters (01.02.2008)
Published in IEEE electron device letters (01.02.2008)
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Issues Associated to Rare Earth Silicide Integration in Ultra Thin FD SOI Schottky Barrier nMOSFETs
Larrieu, Guilhem, Yarekha, Dmytro A., Dubois, Emmanuel, Deresmes, Dominique, Breil, Nicolas, Reckinger, Nicolas, Tang, Xiaohui, Halimaoui, Aomar
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Method for securing an integrated circuit upon making it
Bernasconi, Sophie, Pebay-Peyroula, Florian, Halimaoui, Aomar, Charpin-Nicolle, Christelle
Year of Publication 15.03.2022
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Year of Publication 15.03.2022
Patent
ELECTRICALLY CONDUCTIVE ELEMENT
RODRIGUEZ, Guillaume, TESSAIRE, Magali, DUBARRY, Christophe, HALIMAOUI, Aomar
Year of Publication 19.08.2021
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Year of Publication 19.08.2021
Patent
UHV Fabrication of the Ytterbium Silicide as Potential Low Schottky Barrier S/D Contact Material for N-Type MOSFET
Yarekha, Dmytro A., Larrieu, Guilhem, Breil, Nicolas, Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Soyer, Caroline, Remiens, Denis, Reckinger, Nicolas, Tang, Xiaohui, Laszcz, Adam, Ratajczak, Jacek, Halimaoui, Aomar
Published in ECS transactions (01.01.2009)
Published in ECS transactions (01.01.2009)
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