IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
Yokogawa, Sozo, Oshiyama, Itaru, Ikeda, Harumi, Ebiko, Yoshiki, Hirano, Tomoyuki, Saito, Suguru, Oinoue, Takashi, Hagimoto, Yoshiya, Iwamoto, Hayato
Published in Scientific reports (19.06.2017)
Published in Scientific reports (19.06.2017)
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Journal Article
Structural and electrical characteristics of ion-induced Si damage during atomic layer etching
Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Hagimoto, Yoshiya, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Journal Article
High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms
Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.07.2023)
Published in Japanese Journal of Applied Physics (01.07.2023)
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Journal Article
Effect of Post-Etch Wet Cleaning on GaAs Surfaces
Hirano, Tomoki, Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya
Published in Solid state phenomena (14.08.2023)
Published in Solid state phenomena (14.08.2023)
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Journal Article
Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method
Kuboi, Nobuyuki, Matsugai, Hiroyasu, Tatsumi, Tetsuya, Kobayashi, Shoji, Hagimoto, Yoshiya, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.07.2023)
Published in Japanese Journal of Applied Physics (01.07.2023)
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Journal Article
(Invited) Bonding Strength of Cu-Cu Hybrid Bonding for 3D Integration Process
Fujii, Nobutoshi, Furuse, Shunsuke, Yoshioka, Hirotaka, Ogawa, Naoki, Yamada, Taichi, Hirano, Takaaki, Saito, Suguru, Hagimoto, Yoshiya, Iwamoto, Hayato
Published in ECS transactions (29.09.2023)
Published in ECS transactions (29.09.2023)
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Journal Article
Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle
Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar U., Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.06.2022)
Published in Japanese Journal of Applied Physics (01.06.2022)
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Journal Article
Characterization of Wet Chemical Atomic Layer Etching of InGaAs
Hirano, Tomoki, Fukatani, Takashi, Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya
Published in Solid state phenomena (01.02.2021)
Published in Solid state phenomena (01.02.2021)
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Journal Article
Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
Nishio, Kenya, Hagimoto, Yoshiya, Oinoue, Takashi, Saito, Suguru, Ida, Junichi, Iwamoto, Hayato, Ogawa, Yuichi
Published in Solid state phenomena (01.02.2021)
Published in Solid state phenomena (01.02.2021)
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Journal Article
Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process
Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya, Oinoue, Takashi, Okuyama, Atsushi
Published in Solid state phenomena (01.08.2018)
Published in Solid state phenomena (01.08.2018)
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Journal Article
Effect of WET treatment on Group III-V Compound Semiconductor Surface
Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya
Published in Solid state phenomena (01.08.2018)
Published in Solid state phenomena (01.08.2018)
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Journal Article