High-Density and Fault-Tolerant Cu Atom Switch Technology Toward 28nm-node Nonvolatile Programmable Logic
Nebashi, R., Banno, N., Miyamura, M., Tsuji, Y., Morioka, A., Bai, X., Okamoto, K., Iguchi, N., Numata, H., Hada, H., Sugibayashi, T., Sakamoto, T., Tada, M.
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding
Resistance Controllability of \hbox \hbox/\hbox Stack ReRAM for Low-Voltage and Multilevel Operation
Terai, M., Sakotsubo, Y., Kotsuji, S., Hada, H.
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
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Journal Article
A low-power Cu atom switch programmable logic fabricated in a 40nm-node CMOS technology
Bai, X., Sakamoto, T., Tada, M., Miyamura, M., Tsuji, Y., Morioka, A., Nebashi, R., Banno, N., Okamoto, K., Iguchi, N., Hada, H., Sugibayashi, T.
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM
Takahashi, S., Kai, T., Shimomura, N., Ueda, T., Amano, M., Yoshikawa, M., Kitagawa, E., Asao, Y., Ikegawa, S., Kishi, T., Yoda, H., Nagahara, K., Mukai, T., Hada, H.
Published in IEEE transactions on magnetics (01.10.2006)
Published in IEEE transactions on magnetics (01.10.2006)
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Conference Proceeding
NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors
Miwa, T., Yamada, J., Koike, H., Toyoshima, H., Amanuma, K., Kobayashi, S., Tatsumi, T., Maejima, Y., Hada, H., Kunio, T.
Published in IEEE journal of solid-state circuits (01.03.2001)
Published in IEEE journal of solid-state circuits (01.03.2001)
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Journal Article
Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
Yoshikawa, M., Kitagawa, E., Takahashi, S., Kai, T., Amano, M., Shimomura, N., Kishi, T., Ikegawa, S., Asao, Y., Yoda, H., Nagahara, K., Numata, H., Ishiwata, N., Hada, H., Tahara, S.
Published in Journal of applied physics (15.04.2006)
Published in Journal of applied physics (15.04.2006)
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Journal Article
Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs
Yoshikawa, M., Kai, T., Amano, M., Kitagawa, E., Nagase, T., Nakayama, M., Takahashi, S., Ueda, T., Kishi, T., Tsuchida, K., Ikegawa, S., Asao, Y., Yoda, H., Fukuzumi, Y., Nagahara, K., Numata, H., Hada, H., Ishiwata, N., Tahara, S.
Published in Journal of applied physics (15.05.2005)
Published in Journal of applied physics (15.05.2005)
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Journal Article
Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM
Shimura, K., Ohshima, N., Miura, S., Nebashi, R., Suzuki, T., Hada, H., Tahara, S., Aikawa, H., Ueda, T., Kajiyama, T., Yoda, H.
Published in IEEE transactions on magnetics (01.10.2006)
Published in IEEE transactions on magnetics (01.10.2006)
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Conference Proceeding
Application and Improvement of Precise Resistance Tracing Technique for a Toggle Mode MRAM Evaluation
Katoh, Y., Hada, H., Kasai, N.
Published in IEEE transactions on semiconductor manufacturing (01.11.2008)
Published in IEEE transactions on semiconductor manufacturing (01.11.2008)
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Conference Proceeding
A 16-Mb Toggle MRAM With Burst Modes
Sugibayashi, T., Sakimura, N., Honda, T., Nagahara, K., Tsuji, K., Numata, H., Miura, S., Shimura, K., Kato, Y., Saito, S., Fukumoto, Y., Honjo, H., Suzuki, T., Suemitsu, K., Mukai, T., Mori, K., Nebashi, R., Fukami, S., Ohshima, N., Hada, H., Ishiwata, N., Kasai, N., Tahara, S.
Published in IEEE journal of solid-state circuits (01.11.2007)
Published in IEEE journal of solid-state circuits (01.11.2007)
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Journal Article
Nonvolatile 32×32 crossbar atom switch block integrated on a 65-nm CMOS platform
Banno, N., Tada, M., Sakamoto, T., Okamoto, K., Miyamura, M., Iguchi, N., Nohisa, T., Hada, H.
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage
Sakotsubo, Y, Terai, M, Kotsuji, S, Saito, Y, Tada, M, Yabe, Y, Hada, H
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Reliable solid-electrolyte crossbar switch for programmable logic device
Banno, N, Sakamoto, T, Tada, M, Miyamura, M, Yabe, Y, Saito, Y, Ishida, S, Okamoto, K, Hada, H, Kasai, N, Iguchi, N, Aono, M
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Edge domain dependent pinning effect by stray field in patterned magnetic tunnel junction
Shimomura, N., Kishi, T., Yoshikawa, M., Kitagawa, E., Asao, Y., Hada, H., Yoda, H., Tahara, S.
Published in IEEE transactions on magnetics (01.10.2005)
Published in IEEE transactions on magnetics (01.10.2005)
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Conference Proceeding
Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes
Banno, N., Sakamoto, T., Hada, H., Kasai, N., Iguchi, N., Imai, H., Fujieda, S., Ichihashi, T., Hasegawa, T., Aono, M.
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
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Conference Proceeding
A nested case-control study on disease severity of Alternaria blotch of apple at early and late phases of epidemics
Nekoduka, S., Iwate-ken. Agricultural Research Center, Kitakami (Japan), Hada, H, Iwadate, Y, Ishiguro, K
Published in Nippon shokubutsu byōri gakkai (2009)
Published in Nippon shokubutsu byōri gakkai (2009)
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