Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate
Hoffmann, V., Knauer, A., Brunner, C., Einfeldt, S., Weyers, M., Tränkle, G., Haberland, K., Zettler, J.-T., Kneissl, M.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Conference Proceeding
Anisotropic bow and plastic deformation of GaN on silicon
Dadgar, A., Fritze, S., Schulz, O., Hennig, J., Bläsing, J., Witte, H., Diez, A., Heinle, U., Kunze, M., Daumiller, I., Haberland, K., Krost, A.
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Conference Proceeding
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
Dadgar, A., Schulze, F., Zettler, T., Haberland, K., Clos, R., Straßburger, G., Bläsing, J., Diez, A., Krost, A.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire
Krost, A., Schulze, F., Dadgar, A., Strassburger, G., Haberland, K., Zettler, T.
Published in Physica Status Solidi (b) (01.11.2005)
Published in Physica Status Solidi (b) (01.11.2005)
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Journal Article
MOVPE process development for 650 nm VCSELS using optical in-situ techniques
Zorn, M, Haberland, K, Knigge, A, Bhattacharya, A, Weyers, M, Zettler, J.-T, Richter, W
Published in Journal of crystal growth (01.02.2002)
Published in Journal of crystal growth (01.02.2002)
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Journal Article
Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE
HABERLAND, K, KALUZA, A, ZORN, M, PRISTOVSEK, M, HARDTDEGEN, H, WEYERS, M, ZETTLER, J.-T, RICHTER, W
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
Steins, R., Kaluza, N., Hardtdegen, H., Zorn, M., Haberland, K., Zettler, J.-T.
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Conference Proceeding
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
Zettler, J.-T., Haberland, K., Zorn, M., Pristovsek, M., Richter, W., Kurpas, P., Weyers, M.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Journal Article
Conference Proceeding
Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides
Hardtdegen, H., Kaluza, N., Steins, R., Cho, Y. S., Sofer, Z., Zorn, M., Haberland, K., Zettler, J.-T.
Published in Physica Status Solidi (b) (01.11.2005)
Published in Physica Status Solidi (b) (01.11.2005)
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Journal Article
In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy
Haberland, K, Zorn, M, Klein, A, Bhattacharya, A, Weyers, M, Zettler, J.-T, Richter, W
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Journal Article
Conference Proceeding
Spectroscopic process sensors in MOVPE device production
HABERLAND, K, KURPAS, P, PRISTOVSEK, M, ZETTLER, J.-T, WEYERS, M, RICHTER, W
Published in Applied physics. A, Materials science & processing (01.03.1999)
Published in Applied physics. A, Materials science & processing (01.03.1999)
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Journal Article
Ellipsometric and reflectance-anisotropy measurements on rotating samples
Haberland, K., Hunderi, O., Pristovsek, M., Zettler, J.-T., Richter, W.
Published in Thin solid films (01.02.1998)
Published in Thin solid films (01.02.1998)
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Journal Article
In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
Prall, C., Kaspari, C., Brunner, F., Haberland, K., Weyers, M., Rueter, D.
Published in Journal of crystal growth (01.04.2015)
Published in Journal of crystal growth (01.04.2015)
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Journal Article
GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques
Steimetz, E., Wehnert, T., Haberland, K., Zettler, J.-T., Richter, W.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Conference Proceeding
In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
Prall, C, Kaspari, C, Brunner, F, Haberland, K, Weyers, M, Rueter, D
Published in Journal of crystal growth (01.04.2015)
Published in Journal of crystal growth (01.04.2015)
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Journal Article
First real-time true wafer temperature and growth rate measurements in a closed-coupled showerhead MOVPE reactor during growth of InGa(AsP)
Haberland, K., Mullins, J.T., Schenk, T., Trepk, T., Considine, L., Pakes, A., Taylor, A., Zettler, J.-T.
Published in International Conference onIndium Phosphide and Related Materials, 2003 (2003)
Published in International Conference onIndium Phosphide and Related Materials, 2003 (2003)
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Conference Proceeding
Effektive Therapie mit Afatinib bei leptomeningealer Metastasierung eines EGFR-mutierten Adenokarzinoms mit sekundärer T790M-Mutation
Hoffknecht, P, Innig, G, Hasselblatt, M, Länger, F, Enderle, M, Haberland, K, Dickgreber, N
Published in Pneumologie (24.02.2014)
Published in Pneumologie (24.02.2014)
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Conference Proceeding