Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2
Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide
Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Ja Yong Kim, Ji Won Moon, Sung Joon Yoon, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Te One Youn, Jong Hee Yoo, Jang Won Oh, Ho Joung Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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Conference Proceeding
The effect of crystallinity of HfO2 on the resistive memory switching reliability
Min Gyu Sung, Wan Gee Kim, Jong Hee Yoo, Sook Joo Kim, Jung Nam Kim, Byung Gu Gyun, Jun Young Byun, Taeh Wan Kim, Won Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Improvement of sensing margin and reset switching fail of RRAM
Park, Woo Young, Ju, Wonki, Ko, Young Seok, Kim, Soo Gil, Ha, Tae Jung, Lee, Jae Yeon, Park, Yong Taek, Kim, Kyung Wan, Lee, Jong Chul, Lee, Jong Ho, Moon, Joo Young, Lee, Bo Mi, Gyun, Byung Gu, Lee, Byoung-Ki, Kim, Jin Kook
Published in Solid-state electronics (01.06.2019)
Published in Solid-state electronics (01.06.2019)
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Journal Article
Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]
Kim, Wan Gee, Sung, Min Gyu, Kim, Sook Joo, Yoo, Jong Hee, Youn, Te One, Oh, Jang Won, Kim, Jung Nam, Gyun, Byung Gu, Kim, Taeh Wan, Kim, Chi Ho, Byun, Jun Young, Kim, Won, Joo, Moon Sig, Roh, Jae Sung, Park, Sung Ki
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Breakthrough of selector technology for cross-point 25-nm ReRAM
Kim, Soo Gil, Hwang, Hyun Mi, Lee, Bo Mi, Moon, Joo Young, Park, Woo Young, Gyun, Byung Gu, Lee, Byoung-Ki, Yim, Donggyu, Hong, Sung-Joo, Lee, Jong Chul, Ha, Tae Jung, Lee, Jong Ho, Lee, Jae Yeon, Park, Yong Taek, Kim, Kyung Wan, Ju, Won Ki, Ko, Young Seok
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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