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Gouralnik, A. S., Dotsenko, S. A., Galkin, N. G., Ivanov, V. A., Plotnikov, V. S., Pustovalov, E. V., Cherednichenko, A. I., Gutakovski, A. K., Neklyudova, M. A.
Published in Applied physics. A, Materials science & processing (01.08.2013)
Published in Applied physics. A, Materials science & processing (01.08.2013)
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Brief observe on iron silicide growth on amorphous silicon
Gouralnik, A. S., Lin, Ko-Wei, Dotsenko, S. A., Galkin, N. G., Plotnikov, V. S., Pustovalov, E. V., Cherednichenko, A. I., Vavanova, S. V., Shevlyagin, A. V., Gutakovski, A. K., Neklyudova, M. A.
Published in Physica status solidi. C (01.12.2013)
Published in Physica status solidi. C (01.12.2013)
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Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures
Shamirzaev, T. S., Galkin, N. G., Chusovitin, E. A., Goroshko, D. L., Shevlyagin, A. V., Gutakovski, A. K., Saranin, A. A., Latyshev, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2015)
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Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates
Galkin, N. G., Goroshko, D. L., Polyarnyĭ, V. O., Chusovitin, E. A., Gutakovskiĭ, A. K., Latyshev, A. V., Khang, Y.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
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Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskiĭ, A. K., Revenko, M. A., Sokolov, L. V.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
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Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation
Antonova, I. V., Stas’, V. F., Popov, V. P., Obodnikov, V. I., Gutakovskii, A. K.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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