The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Feil, Maximilian W., Huerner, Andreas, Puschkarsky, Katja, Schleich, Christian, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans, Grasser, Tibor
Published in Crystals (Basel) (01.12.2020)
Published in Crystals (Basel) (01.12.2020)
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Journal Article
Gate Switching Instability in Silicon Carbide MOSFETs-Part II: Modeling
Grasser, Tibor, Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Waldhoer, Dominic, Vasilev, Aleksandr, Waltl, Michael, Aichinger, Thomas, Bockstedte, Michel, Gustin, Wolfgang, Pobegen, Gregor
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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Journal Article
Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental
Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Prigann, Sven, Pobegen, Gregor, Salmen, Paul, Rescher, Gerald, Waldhoer, Dominic, Vasilev, Aleksandr, Gustin, Wolfgang, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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Journal Article
On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
Waschneck, Katja, Salmen, Paul, Feil, Maximilian Wolfgang, Gustin, Wolfgang, Reisinger, Hans, Rescher, Gerald, Grasser, Tibor, Aichinger, Thomas
Published in Materials science forum (06.06.2023)
Published in Materials science forum (06.06.2023)
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Journal Article
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Puschkarsky, Katja, Reisinger, Hans, Aichinger, Thomas, Gustin, Wolfgang, Grasser, Tibor
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
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Conference Proceeding
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Puschkarsky, Katja, Grasser, Tibor, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
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Conference Proceeding
On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETs
Bogner, Christian, Reisinger, Hans, Lahbib, Insaf, Martin, Andreas, Gustin, Wolfgang, Grasser, Tibor, Schlunder, Christian
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
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Conference Proceeding
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs
Feil, Maximilian W., Reisinger, Hans, Kabakow, Andre, Aichinger, Thomas, Gustin, Wolfgang, Grasser, Tibor
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications
Prigann, Sven, Feil, Maximilian W., Reisinger, Hans, Bissinger, Jochen, Strasser, Marc, Waltl, Michael, Schlipf, Johannes, Kaya, Turgay, Bartholomaus, Lars, Gustin, Wolfgang, Basler, Thomas
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs
Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Prigann, Sven, Pobegen, Gregor, Salmen, Paul, Rescher, Gerald, Gustin, Wolfgang, Grasser, Tibor
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
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Conference Proceeding
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Salmen, Paul, Rescher, Gerald, Gustin, Wolfgang, Grasser, Tibor
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Degradation and recovery of variability due to BTI
Schlünder, Christian, Berthold, Jörg, Proebster, Fabian, Martin, Andreas, Gustin, Wolfgang, Reisinger, Hans
Published in Microelectronics and reliability (01.09.2016)
Published in Microelectronics and reliability (01.09.2016)
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Journal Article
Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors
Feil, Maximilian W., Reisinger, Hans, Kabakow, André, Aichinger, Thomas, Schleich, Christian, Vasilev, Aleksandr, Waldhör, Dominic, Waltl, Michael, Gustin, Wolfgang, Grasser, Tibor
Published in Communications engineering (31.01.2023)
Published in Communications engineering (31.01.2023)
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Journal Article
Understanding and modeling AC BTI
Reisinger, Hans, Grasser, Tibor, Ermisch, Karsten, Nielen, Heiko, Gustin, Wolfgang, Schlunder, Christian
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors
ROTT, Gunnar Andreas, ROTT, Karina, REISINGER, Hans, GUSTIN, Wolfgang, GRASSER, Tibor
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Conference Proceeding
Journal Article
Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads
Schlunder, Christian, Proebster, F., Berthold, J., Puschkarsky, Katja, Georgakos, Georg, Gustin, Wolfgang, Reisinger, Hans
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Relevance of off-state NBTI degradation in depletion HVNMOS transistor for power application
Strasser, Marc, Stradiotto, Roberta, Aresu, Stefano, Puschkarsky, Katja, Poehle, Holger, Gustin, Wolfgang
Published in 2018 International Integrated Reliability Workshop (IIRW) (01.10.2018)
Published in 2018 International Integrated Reliability Workshop (IIRW) (01.10.2018)
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Conference Proceeding
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors
Rott, Gunnar Andreas, Rott, Karina, Reisinger, Hans, Gustin, Wolfgang, Grasser, Tibor
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Journal Article