Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
Joshi, Vipin, Chaudhuri, Rajarshi Roy, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG
Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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Journal Article
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State
Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
Joshi, Vipin, Roy Chaudhuri, Rajarshi, Dutta Gupta, Sayak, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer
Roy Chaudhuri, Rajarshi, Joshi, Vipin, Dutta Gupta, Sayak, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Structural and Magnetic Variations in a Family of Isoskeletal, Oximate‐Bridged {MnIV2MIII} Complexes (MIII=Mn, Gd, Dy)
Alaimo, Alysha A., Worrell, Anne, Gupta, Sayak Das, Abboud, Khalil A., Lampropoulos, Christos, Christou, George, Stamatatos, Theocharis C.
Published in Chemistry : a European journal (21.02.2018)
Published in Chemistry : a European journal (21.02.2018)
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Journal Article
UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities
Dutta Gupta, Sayak, Joshi, Vipin, Shankar, Bhawani, Shikha, Swati, Raghavan, Srinivasan, Shrivastava, Mayank
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State
Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Structural Diversities in Heterometallic Mn–Ca Cluster Chemistry from the Use of Salicylhydroxamic Acid: {MnIII 4Ca2}, {MnII/III 6Ca2}, {MnIII/IV 8Ca}, and {MnIII 8Ca2} Complexes with Relevance to Both High- and Low-Valent States of the Oxygen-Evolving Complex
Alaimo, Alysha A, Koumousi, Evangelia S, Cunha-Silva, Luís, McCormick, Laura J, Teat, Simon J, Psycharis, Vassilis, Raptopoulou, Catherine P, Mukherjee, Shreya, Li, Chaoran, Gupta, Sayak Das, Escuer, Albert, Christou, George, Stamatatos, Theocharis C
Published in Inorganic chemistry (05.09.2017)
Published in Inorganic chemistry (05.09.2017)
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Journal Article
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II
Chaudhuri, Rajarshi Roy, Gupta, Amratansh, Joshi, Vipin, Malik, Rasik Rashid, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
Roy Chaudhuri, Rajarshi, Gupta, Amratansh, Joshi, Vipin, Malik, Rasik Rashid, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer
Joshi, Vipin, Gupta, Sayak Dutta, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding