Search Results - "Guillaumot, Bernard" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

by CASSE, Mikaël, THEVENOD, Laurent, BILLON, Thierry, MOUIS, Mireille, BOULANGER, Fabien, GUILLAUMOT, Bernard, TOSTI, Lucie, MARTIN, Francois, MITARD, Jérome, WEBER, Olivier, ANDRIEU, Francois, ERNST, Thomas, REIMBOLD, Gilles
Published in IEEE transactions on electron devices (01.04.2006)

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Journal Article

Analog/RF Performance of Multichannel SOI MOSFET

Analog/RF Performance of Multichannel SOI MOSFET

by Tao Chuan Lim, Bernard, E., Rozeau, O., Ernst, T., Guillaumot, B., Vulliet, N., Buj-Dufournet, C., Paccaud, M., Lepilliet, S., Dambrine, G., Danneville, F.
Published in IEEE transactions on electron devices (01.07.2009)

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Journal Article

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

by De Salvo, B., Ghibaudo, G., Pananakakis, G., Masson, P., Baron, T., Buffet, N., Fernandes, A., Guillaumot, B.
Published in IEEE transactions on electron devices (01.08.2001)

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Journal Article

Multi-Channel Field-Effect Transistor (MCFET)-Part I: Electrical Performance and Current Gain Analysis

Multi-Channel Field-Effect Transistor (MCFET)-Part I: Electrical Performance and Current Gain Analysis

by Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.
Published in IEEE transactions on electron devices (01.06.2009)

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Journal Article

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stack

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stack

by WEBER, Olivier, DAMLENCOURT, Jean-Francois, ANDRIEU, Francois, DUCROQUET, Frédérique, ERNST, Thomas, HARTMANN, Jean-Michel, PAPON, Anne-Marie, RENAULT, Olivier, GUILLAUMOT, Bernard, DELEONIBUS, Simon
Published in IEEE transactions on electron devices (01.03.2006)

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Journal Article

First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

by Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Lim, T.C., Rozeau, O., Danneville, Francois, Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.
Published in IEEE electron device letters (01.02.2009)

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Journal Article

Multichannel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance

Multichannel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance

by Bernard, Emilie, Ernst, Thomas, Guillaumot, Bernard, Vulliet, Nathalie, Garros, Xavier, Coronel, Philippe, Skotnicki, Thomas, Deleonibus, Simon, Faynot, Olivier
Published in IEEE transactions on electron devices (2009)

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Journal Article

On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics

On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics

by Bauza, Daniel, Ghobar, Oussama, Guillaumot, Bernard
Published in ECS transactions (27.04.2007)

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Journal Article

Multi-Channel Field-Effect Transistor (MCFET)-Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance

Multi-Channel Field-Effect Transistor (MCFET)-Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance

by Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Garros, X., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.
Published in IEEE transactions on electron devices (01.06.2009)

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Journal Article

First Internal Spacers' Introduction in Record High ION/IOFF TiN/HfO2 Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements

First Internal Spacers' Introduction in Record High ION/IOFF TiN/HfO2 Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements

by BERNARD, Emilie, ERNST, Thomas, FAYNOT, Olivier, GUILLAUMOT, Bernard, VULLIET, Nathalie, TAO CHUAN LIM, ROZEAU, Olivier, DANNEVILLE, Francois, CORONEL, Philippe, SKOTNICKI, Thomas, DELEONIBUS, Simon
Published in IEEE electron device letters (2009)

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Journal Article

Experimental and theoretical investigation of nonvolatile memory data-retention

Experimental and theoretical investigation of nonvolatile memory data-retention

by De Salvo, B., Ghibaudo, G., Pananakakis, G., Reimbold, G., Mondond, F., Guillaumot, B., Candelier, P.
Published in IEEE transactions on electron devices (01.07.1999)

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Journal Article

SOI MOSFETs with buried alumina: Thermal and electrical aspects

SOI MOSFETs with buried alumina: Thermal and electrical aspects

by OSHIMA, Kyosuke, CRISTOLOVEANU, Sorin, GUILLAUMOT, Bernard, DELEONIBUS, Simon, IWAI, Hiroshi
Published in Journal of the Electrochemical Society (2004)

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Journal Article

Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications

Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications

by Barnola, Sebastien, Vizioz, Christian, Vulliet, Nathalie, Dupré, Cécilia, Ernst, Thomas, Gautier, Pauline, Arvet, Christian, Guillaumot, Bernard, Bernard, Emilie, Pauliac-Vaujeour, S., Comboroure, Corine, Hartmann, Jean-Michel, Borel, Stephan, Chevolleau, Thierry, Maffini-Alvaro, V, Becu, S
Published in ECS transactions (2009)

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Journal Article

A power-efficient impoved-stability 6T SRAM cell in 45nm Multi-Channel FET technology

A power-efficient impoved-stability 6T SRAM cell in 45nm Multi-Channel FET technology

by Thomas, O., Guillaumot, B., Ernst, T., Cousin, B., Rozeau, O.
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)

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Conference Proceeding

Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

by Bernard, Emilie, Guillaumot, Bernard, Coronel, Philippe
Year of Publication 12.07.2011

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Patent

Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

by GUILLAUMOT BERNARD, BERNARD EMILIE, CORONEL PHILIPPE
Year of Publication 12.07.2011

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Patent

Damascene architecture electronic storage and method for making same

Damascene architecture electronic storage and method for making same

by Deleonibus, Simon, Guillaumot, Bernard
Year of Publication 18.10.2005

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Patent

Damascene architecture electronic storage and method for making same

Damascene architecture electronic storage and method for making same

by DELEONIBUS SIMON, GUILLAUMOT BERNARD
Year of Publication 18.10.2005

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Patent

PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR A GRILLE ENTERREE ET CIRCUIT INTEGRE CORRESPONDANT

PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR A GRILLE ENTERREE ET CIRCUIT INTEGRE CORRESPONDANT

by GUILLAUMOT BERNARD, BERNARD EMILIE, CORONEL PHILIPPE
Year of Publication 08.04.2011

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Patent

On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics

On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics

by Bauza, Daniel, Ghobar, Oussama, Guillaumot, Bernard
Published in Meeting abstracts (Electrochemical Society) (01.03.2007)

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Journal Article