Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al sub(2)O sub(3)/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
Gueclue, Cigdem S, Oezdemir, Ahmet Faruk, Altindal, Semsettin
Published in Applied physics. A, Materials science & processing (01.12.2016)
Published in Applied physics. A, Materials science & processing (01.12.2016)
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