AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V
RUI LI, YEQING LU, WISTEY, Mark, HUILI XING, SEABAUGH, Alan, GUANGLE ZHOU, QINGMIN LIU, DOO CHAE, Soo, VASEN, Tim, SIK HWANG, Wan, QIN ZHANG, FAY, Patrick, KOSEL, Tom
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Yeqing Lu, Guangle Zhou, Rui Li, Qingmin Liu, Qin Zhang, Vasen, T., Soo Doo Chae, Kosel, T., Wistey, M., Huili Xing, Seabaugh, A., Fay, P.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate
Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Vasen, T., Chen Chen, Haijun Zhu, Jenn-Ming Kuo, Koswatta, S., Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I/I Ratio Near \hbox
Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Qingmin Liu, Vasen, T., Haijun Zhu, Jenn-Ming Kuo, Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 \mu\hbox/\mu\hbox at 0.5 V
Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Vasen, T., Wan Sik Hwang, Qin Zhang, Fay, P., Kosel, T., Wistey, M., Huili Xing, Seabaugh, A.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark
Zhengping Jiang, Yu He, Guangle Zhou, Kubis, Tillmann, Xing, Huili Grace, Klimeck, Gerhard
Published in 71st Device Research Conference (01.06.2013)
Published in 71st Device Research Conference (01.06.2013)
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Conference Proceeding
Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs
Guangle Zhou, Lu, Y., Li, R., Zhang, Q., Hwang, W., Liu, Q., Vasen, T., Zhu, H., Kuo, J., Koswatta, S., Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs
Guangle Zhou, Kabeer, S., Wheeler, D., Seabaugh, A., Huili Xing
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field
Li, Rui, Lu, Yeqing, Chae, Soo Doo, Zhou, Guangle, Liu, Qingmin, Chen, Chen, Shahriar Rahman, M., Vasen, Tim, Zhang, Qin, Fay, Patrick, Kosel, Tom, Wistey, Mark, Xing, Huili (Grace), Koswatta, Siyuranga, Seabaugh, Alan
Published in Physica status solidi. C (01.02.2012)
Published in Physica status solidi. C (01.02.2012)
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Journal Article
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I_ON/I_OFF Ratio Near {10}6
Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Liu, Qingmin, Vasen, Tim, Zhu, Haijun, Kuo, Jenn-Ming, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh, Alan, Xing, Huili
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]
Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Liu, Qingmin, Vasen, Tim, Zhu, Haijun, Kuo, Jenn-Ming, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh, Alan, Xing, Huili
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy
Qin Zhang, Guangle Zhou, Xing, H. G., Seabaugh, A. C., Kun Xu, Kirillov, O. A., Richter, C. A., Nguyen, N. V.
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01.12.2011)
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01.12.2011)
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Conference Proceeding
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106
GUANGLE ZHOU, YEQING LU, FAY, Patrick, SEABAUGH, Alan, HUILI XING, RUI LI, QIN ZHANG, QINGMIN LIU, VASEN, Tim, HAIJUN ZHU, KUO, Jenn-Ming, KOSEL, Tom, WISTEY, Mark
Published in IEEE electron device letters (2012)
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Published in IEEE electron device letters (2012)
Journal Article
Fabrication approach for lateral InGaAs tunnel transistors
Wheeler, D., Kabeer, S., Yeqing Lu, Vasen, T., Qin Zhang, Guangle Zhou, Clark, K., Haijun Zhu, Yung-Chung Kao, Fay, P., Kosel, T., Huili Xing, Seabaugh, A.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
(Invited) III-V Tunnel Field-Effect Transistors
Seabaugh, Alan, Chae, Soo Doo, Fay, Patrick, Hwang, Wan Sik, Kosel, Tom, Li, Rui, Liu, Qingmin, Lu, Yeqing, Vasen, Tim, Wistey, Mark, Xing, Grace (Huili), Zhou, Guangle, Zhang, Qin
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article