Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
Nanhui, Niu, Huaibing, Wang, Jianping, Liu, Naixin, Liu, Yanhui, Xing, Jun, Han, Jun, Deng, Guangdi, Shen
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Enhanced performance of p-GaN by Mg δ doping
Wang, Huaibing, Liu, Jianping, Niu, Nanhui, Shen, Guangdi, Zhang, Shuming
Published in Journal of crystal growth (01.06.2007)
Published in Journal of crystal growth (01.06.2007)
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Journal Article
Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
Nanhui, Niu, Huaibing, Wang, Jianping, Liu, Naixin, Liu, Yanhui, Xing, Jun, Han, Jun, Deng, Guangdi, Shen
Published in Solid-state electronics (01.06.2007)
Published in Solid-state electronics (01.06.2007)
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Journal Article
Investigation of GaN layer grown on different low misoriented sapphire by MOCVD
Xing, Yanhui, Han, Jun, Deng, Jun, Li, Jianjun, Xu, Chen, Shen, Guangdi
Published in Applied surface science (01.04.2009)
Published in Applied surface science (01.04.2009)
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Journal Article
Experimental and numerical investigation on GaN/Al2O3 laser lift-off technique
Wang, Ting, Fang, Yuan, Guo, Xia, Shen, Guangdi, Cui, Zhanzhong
Published in Thin solid films (26.02.2007)
Published in Thin solid films (26.02.2007)
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Journal Article
Thin film AlGaInP light emitting diodes with different reflectors
Gao, Wei (伟高), Guo, Weiling (伟玲 郭), Zou, Deshu (德恕 邹), Qin, Yuan (圆秦), Jiang, Wenjing (文静 蒋), Shen, Guangdi (光地 沈)
Published in Journal of semiconductors (01.12.2010)
Published in Journal of semiconductors (01.12.2010)
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Journal Article
The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes
Da, Xiaoli, Guo, Xia, Dong, Limin, Song, Yingping, Ai, Weiwei, Shen, Guangdi
Published in Solid-state electronics (01.03.2006)
Published in Solid-state electronics (01.03.2006)
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Journal Article
Enhanced output of flip-chip light-emitting diodes with a sidewall reflector
Zhu, Yanxu, Xu, Chen, Da, Xiaoli, Liang, Ting, Zhang, Jianming, Shen, Guangdi
Published in Solid-state electronics (01.05.2007)
Published in Solid-state electronics (01.05.2007)
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Journal Article
Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
Wei, Gao, Weiling, Guo, Yanxu, Zhu, Wenjing, Jiang, Guangdi, Shen
Published in Journal of semiconductors (01.06.2009)
Published in Journal of semiconductors (01.06.2009)
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Journal Article
GaN-based light-emitting diodes with SiONx on sidewalls
Zhu, Yanxu, Xu, Chen, Da, Xiaoli, Niu, Nanhui, Han, Jun, Shen, Guangdi
Published in Semiconductor science and technology (01.06.2007)
Published in Semiconductor science and technology (01.06.2007)
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Journal Article
Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening
Liu, Zike, Gao, Wei, Xu, Chen, Zou, Deshu, Qin, Yuan, Guo, Jing, Shen, Guangdi
Published in Journal of semiconductors (01.11.2010)
Published in Journal of semiconductors (01.11.2010)
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Journal Article
Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes
Da, XiaoLi, Shen, GuangDi, Xu, Chen, Zou, DeShu, Zhu, YanXu, Zhang, Jia
Published in Science China. Information sciences (01.08.2009)
Published in Science China. Information sciences (01.08.2009)
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Journal Article
Interrupted Mg doping of GaN with MOCVD for improved p-type layers
Yanhui, Xing, Jun, Han, Jianping, Liu, Nanhui, Niu, Jun, Deng, Litong, Guangdi, Shen
Published in Vacuum (12.09.2007)
Published in Vacuum (12.09.2007)
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Journal Article
Absorption of photons in the thin film AlGaInP light emitting diode
Gao, Wei (伟高), Guo, Weiling (伟玲 郭), Zou, Deshu (德恕 邹), Jiang, Wenjing (文静 蒋), Liu, Zike (自可 刘), Shen, Guangdi (光地 沈)
Published in Journal of semiconductors (01.01.2011)
Published in Journal of semiconductors (01.01.2011)
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Journal Article
AlGaInP LEDs with surface anti-reflecting structure
Yixin, Chen, Guangdi, Shen, Jianjun, Li, Jinru, Han, Chen, Xu
Published in Journal of semiconductors (01.08.2009)
Published in Journal of semiconductors (01.08.2009)
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Journal Article
ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes
Shu, Xiongwen, Xu, Chen, Tian, Zengxia, Shen, Guangdi
Published in Solid-state electronics (01.12.2005)
Published in Solid-state electronics (01.12.2005)
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