Search Results - "Gros-Jean, M." :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

by Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Cassé, M., Allain, F., Loubet, N., Pham-Nguyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.
Published in Solid-state electronics (01.07.2009)

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Journal Article Conference Proceeding

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

by BERTAUD, T, BERMOND, C, LACREVAZ, T, VALLEE, C, MORAND, Y, FLECHET, B, FARCY, A, GROS-JEAN, M, BLONKOWSKI, S
Published in Microelectronic engineering (01.03.2010)

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Conference Proceeding Journal Article

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

by Gaillard, N., Mariolle, D., Bertin, F., Gros-Jean, M., Proust, M., Bsiesy, A., Bajolet, A., Chhun, S., Djebbouri, M.
Published in Microelectronic engineering (01.11.2006)

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Journal Article Conference Proceeding

Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

by Boujamaa, R, Martinez, E, Pierre, F, Renault, O, Detlefs, B, Zegenhagen, J, Baudot, S, Gros-Jean, M, Bertin, F, Dubourdieu, C
Published in Applied surface science (30.04.2015)

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Journal Article

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

by Foissac, R., Blonkowski, S., Kogelschatz, M., Delcroix, P., Gros-Jean, M., Bassani, F.
Published in Microelectronics and reliability (01.12.2013)

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Journal Article

Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact

Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact

by Alemany, M, Chabli, A, Oudot, E, Pierre, F, Desgardin, P, Bertin, F, Gros-Jean, M, Barthe, M F
Published in Journal of physics. Conference series (01.01.2017)

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Journal Article

Investigation of point defects in HfO 2 using positron annihilation spectroscopy: internal electric fields impact

Investigation of point defects in HfO 2 using positron annihilation spectroscopy: internal electric fields impact

by Alemany, M, Chabli, A, Oudot, E, Pierre, F, Desgardin, P, Bertin, F, Gros-Jean, M, Barthe, M F
Published in Journal of physics. Conference series (01.01.2017)

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Journal Article

Incorporation of cadmium sulfide into nanoporous silicon by sequential chemical deposition from solution

Incorporation of cadmium sulfide into nanoporous silicon by sequential chemical deposition from solution

by GROS-JEAN, M, HERINO, R, LINCOT, D
Published in Journal of the Electrochemical Society (01.07.1998)

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Journal Article

Gaseous Phase Study of the Zr-Organometallic ALD Precursor TEMAZ by Mass Spectrometry

Gaseous Phase Study of the Zr-Organometallic ALD Precursor TEMAZ by Mass Spectrometry

by Monnier, D., Nuta, I., Chatillon, C., Gros-Jean, M., Volpi, F., Blanquet, E.
Published in Journal of the Electrochemical Society (2009)

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Journal Article

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

by GAUMER, C, MARTINEZ, E, CHABLI, A, LHOSTIS, S, GUITTET, M.-J, GROS-JEAN, M, BARNES, J.-P, LICITRA, C, ROCHAT, N, BARRETT, N, BERTIN, F
Published in Microelectronic engineering (2011)

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Journal Article

Investigation on Oxygen Diffusion in a High-k Metal-Gate Stack for Advanced CMOS Technology by XPS

Investigation on Oxygen Diffusion in a High-k Metal-Gate Stack for Advanced CMOS Technology by XPS

by Kechichian, Ardem, Barboux, Philippe, Gros-Jean, Mickael
Published in ECS transactions (01.01.2013)

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Journal Article

Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

by THOMAS, M, FARCY, A, DELOFFRE, E, CREMER, S, BRUYERE, S, CHENEVIER, B, TORRES, J, GAILLARD, N, PERROT, C, GROS-JEAN, M, MATKO, I, CORDEAU, M, SAIKALY, W, PROUST, M, CAUBET, P
Published in Microelectronic engineering (01.11.2006)

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Conference Proceeding Journal Article

Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

by Lacrevaz, T., Fléchet, B., Farcy, A., Torres, J., Gros-Jean, M., Bermond, C., Vo, T.T., Cueto, O., Blampey, B., Angénieux, G., Piquet, J., de Crécy, F.
Published in Microelectronic engineering (01.11.2006)

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Journal Article Conference Proceeding

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

by PINZELLI, L, GROS-JEAN, M, BRECHET, Y, VOLPI, F, BAJOLET, A, GIRAUDIN, J.-C
Published in Microelectronics and reliability (01.04.2007)

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Conference Proceeding Journal Article

Wide band frequency and in situ characterization of high permittivity insulators (high- k) for high-speed integrated passives

Wide band frequency and in situ characterization of high permittivity insulators (high- k) for high-speed integrated passives

by Lacrevaz, T., Fléchet, B., Farcy, A., Torres, J., Gros-Jean, M., Bermond, C., Cueto, O., Blampey, B., Angénieux, G., Piquet, J., de Crécy, F.
Published in Microelectronic engineering (01.12.2005)

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Journal Article Conference Proceeding

Formation and characterization of CdS/methyl-grafted porous silicon junctions

Formation and characterization of CdS/methyl-grafted porous silicon junctions

by Gros-Jean, M, Herino, R, Chazalviel, J.-N, Ozanam, F, Lincot, D
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2000)

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Journal Article Conference Proceeding

Anodization of undoped amorphous silicon by electrical injection of holes

Anodization of undoped amorphous silicon by electrical injection of holes

by Gros-Jean, M, Solomon, I, Chazalviel, J.-N
Published in Solid state communications (19.02.1999)

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Journal Article

Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

by Borsoni, G., Béchu, N., Gros-Jean, M., Korwin-Pawlowski, M.L., Laffitte, R., Le Roux, V., Vallier, L., Rochat, N., Wyon, C.
Published in Microelectronics and reliability (01.07.2001)

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Journal Article

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

by Boujamaa, R., Martinez, E., Pierre, F., Renault, O., Detlefs, B., Zegenhagen, J., Baudot, S., Gros-Jean, M., Bertin, F., Dubourdieu, C.
Published in Applied surface science (30.04.2015)

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Journal Article

Impact of high temperature annealing on La diffusion and flatband voltage (V fb ) modulation in TiN/LaO x /HfSiON/SiON/Si gate stacks

Impact of high temperature annealing on La diffusion and flatband voltage (V fb ) modulation in TiN/LaO x /HfSiON/SiON/Si gate stacks

by Boujamaa, R., Baudot, S., Rochat, N., Pantel, R., Martinez, E., Renault, O., Detlefs, B., Zegenhagen, J., Loup, V., Martin, F., Gros-Jean, M., Bertin, F., Dubourdieu, C.
Published in Journal of applied physics (15.03.2012)

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Journal Article