Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study
Vandemaele, M., Kaczer, B., Tyaginov, S., Franco, J., Bury, E., Chasin, A., Makarov, A., Hellings, G., Groeseneken, G.
Published in IEEE electron device letters (01.02.2023)
Published in IEEE electron device letters (01.02.2023)
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Journal Article
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics
Xiang, Y., Bardon, M. Garcia, Kaczer, B., Alam, Md Nur K., Ragnarsson, L.-A., Kaczmarek, K., Parvais, B., Groeseneken, G., Van Houdt, J.
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI
Kaczer, B, Roussel, Ph J, Grasser, T, Groeseneken, G
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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Journal Article
Conference Proceeding
Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices
Bizindavyi, J., Verhulst, A. S., Verreck, D., Soree, Bart, Groeseneken, G.
Published in IEEE electron device letters (01.11.2019)
Published in IEEE electron device letters (01.11.2019)
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Journal Article
Variability in Planar FeFETs-Channel Percolation Impact
Kaczmarek, K., Bardon, M. Garcia, Xiang, Y., Ronchi, N., Ragnarsson, L.-A., Celano, U., Banerjee, K., Kaczer, B., Groeseneken, G., Van Houdt, J.
Published in IEEE transactions on electron devices (01.07.2023)
Published in IEEE transactions on electron devices (01.07.2023)
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Journal Article
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.
Published in IEEE transactions on electron devices (01.02.2008)
Published in IEEE transactions on electron devices (01.02.2008)
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Journal Article
Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs
Kapila, G., Kaczer, B., Nackaerts, A., Collaert, N., Groeseneken, G.V.
Published in IEEE electron device letters (01.03.2007)
Published in IEEE electron device letters (01.03.2007)
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Journal Article
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H.E., Schwalke, U.
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
Florent, K., Lavizzari, S., Di Piazza, L., Popovici, M., Vecchio, E., Potoms, G., Groeseneken, G., Van IHoudt, J.
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.
Published in IEEE electron device letters (01.12.2008)
Published in IEEE electron device letters (01.12.2008)
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Journal Article
Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions
Houssa, M., Pantisano, L., Ragnarsson, L.-Å., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Groeseneken, G., Heyns, M.M.
Published in Materials science & engineering. R, Reports : a review journal (30.04.2006)
Published in Materials science & engineering. R, Reports : a review journal (30.04.2006)
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Journal Article
Origin of NBTI variability in deeply scaled pFETs
Kaczer, B, Grasser, T, Roussel, P J, Franco, J, Degraeve, R, Ragnarsson, L, Simoen, E, Groeseneken, G, Reisinger, H
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM
Chen, C. Y., Fantini, A., Goux, L., Gorine, G., Redolfi, A., Groeseneken, G., Jurczak, M.
Published in IEEE electron device letters (01.09.2016)
Published in IEEE electron device letters (01.09.2016)
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Journal Article
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs
Chen, W.-C., Chen, S.-H., Veloso, A., Serbulova, K., Hellings, G., Groeseneken, G.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
Hu, J., Stoffels, S., Lenci, S., Ronchi, N., Venegas, R., You, S., Bakeroot, B., Groeseneken, G., Decoutere, S.
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Journal Article
Conference Proceeding
Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Leonelli, D., Vandooren, A., Rooyackers, R., De Gendt, S., Heyns, M.M., Groeseneken, G.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Journal Article
Conference Proceeding