Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
Liu, Xiang, Kikkawa, Toshihide, Rhodes, David Michael, Mishra, Umesh, Wu, Mo, Gritters, John Kirk, Lal, Rakesh K, Neufeld, Carl Joseph
Year of Publication 03.05.2022
Get full text
Year of Publication 03.05.2022
Patent
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSULATOR
Liu, Xiang, Kikkawa, Toshihide, Rhodes, David Michael, Mishra, Umesh, Wu, Mo, Gritters, John Kirk, Lal, Rakesh K, Neufeld, Carl Joseph
Year of Publication 11.02.2021
Get full text
Year of Publication 11.02.2021
Patent
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL(1-X)SIXO GATE INSULATOR
LAL, Rakesh, K, NEUFELD, Carl Joseph, GRITTERS, John, Kirk, MISHRA, Umesh, KIKKAWA, Toshihide, RHODES, David, Michael, LIU, Xiang, WU, Mo
Year of Publication 20.07.2017
Get full text
Year of Publication 20.07.2017
Patent
Enhancement mode iii-nitride devices having an al1-xsixo gate insulator
NEUFELD, CARL JOSEPH, RHODES, DAVID MICHAEL, LIU, XIANG, LAL, RAKESH K, MISHRA, UMESH, KIKKAWA, TOSHIHIDE, GRITTERS, JOHN KIRK, WU, MO
Year of Publication 21.02.2021
Get full text
Year of Publication 21.02.2021
Patent
Enhancement mode III-nitride devices having an AL(1-X)SIXO gate insulator
RHODES DAVID MICHAEL, NEUFELD CARL JOSEPH, KIKKAWA TOSHIHIDE, GRITTERS JOHN KIRK, LAL RAKESH K, MISHRA UMESH, LIU XIANG, WU MO
Year of Publication 28.09.2018
Get full text
Year of Publication 28.09.2018
Patent
Enhancement mode III-nitride devices having an AL1-xSIxO gate insulator
NEUFELD, CARL JOSEPH, RHODES, DAVID MICHAEL, LIU, XIANG, LAL, RAKESH K, MISHRA, UMESH, KIKKAWA, TOSHIHIDE, GRITTERS, JOHN KIRK, WU, MO
Year of Publication 01.10.2017
Get full text
Year of Publication 01.10.2017
Patent