Parameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model
Ruiyun Fu, Grekov, Alexander E., Kang Peng, Santi, Enrico
Published in IEEE transactions on industry applications (01.09.2014)
Published in IEEE transactions on industry applications (01.09.2014)
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Journal Article
A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
Platania, E, Zhiyang Chen, Chimento, Filippo, Grekov, Alexander E, Ruiyun Fu, Liqing Lu, Raciti, Angelo, Hudgins, Jerry L, Mantooth, H A, Sheridan, D C, Casady, J, Santi, Enrico
Published in IEEE transactions on industry applications (01.01.2011)
Published in IEEE transactions on industry applications (01.01.2011)
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Journal Article
Parameter Extraction Procedure for Vertical SiC Power JFET
Grekov, A. E., Zhiyang Chen, Ruiyun Fu, Hudgins, J. L., Mantooth, H. A., Sheridan, D. C., Casady, J., Santi, E.
Published in IEEE transactions on industry applications (01.07.2011)
Published in IEEE transactions on industry applications (01.07.2011)
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Journal Article
Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes
Chen, Zhiyang, Grekov, Alexander E., Fu, Ruiyun, Hudgins, Jerry L., Mantooth, H. Alan, Sheridan, David C., Casady, Jeff, Santi, Enrico
Published in IEEE transactions on industry applications (01.07.2011)
Published in IEEE transactions on industry applications (01.07.2011)
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Journal Article