On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography
Gregušová, D., Martaus, J., Fedor, J., Kúdela, R., Kostič, I., Cambel, V.
Published in Ultramicroscopy (01.07.2009)
Published in Ultramicroscopy (01.07.2009)
Get full text
Journal Article
Novel magnetic tips developed for the switching magnetization magnetic force microscopy
Cambel, V, Eliás, P, Gregusová, D, Fedor, J, Martaus, J, Karapetrov, G, Novosad, V, Kostic, I
Published in Journal of nanoscience and nanotechnology (01.07.2010)
Published in Journal of nanoscience and nanotechnology (01.07.2010)
Get more information
Journal Article
Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St, Moers, J., Mayer, J., Hardtdegen, H.
Published in Applied physics letters (25.01.2021)
Published in Applied physics letters (25.01.2021)
Get full text
Journal Article
InN/InAlN heterostructures for new generation of fast electronics
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Published in Journal of applied physics (28.06.2024)
Published in Journal of applied physics (28.06.2024)
Get full text
Journal Article
Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Hashizume, T., Kuzmík, J.
Published in Journal of applied physics (14.09.2014)
Published in Journal of applied physics (14.09.2014)
Get full text
Journal Article
Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H
Published in Semiconductor science and technology (01.09.2021)
Published in Semiconductor science and technology (01.09.2021)
Get full text
Journal Article
InN: Breaking the limits of solid-state electronics
Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.
Published in AIP advances (01.12.2021)
Published in AIP advances (01.12.2021)
Get full text
Journal Article
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.
Published in Applied surface science (31.12.2017)
Published in Applied surface science (31.12.2017)
Get full text
Journal Article
Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs
Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.
Published in Applied surface science (30.10.2020)
Published in Applied surface science (30.10.2020)
Get full text
Journal Article
Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction
Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T
Published in Semiconductor science and technology (24.03.2017)
Published in Semiconductor science and technology (24.03.2017)
Get full text
Journal Article
Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Get full text
Journal Article
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
Get full text
Journal Article
Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures
Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.
Published in Materials science in semiconductor processing (01.03.2019)
Published in Materials science in semiconductor processing (01.03.2019)
Get full text
Journal Article
Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition
Gregušová, D., Stoklas, R., Mizue, Ch, Hori, Y., Novák, J., Hashizume, T., Kordoš, P.
Published in Journal of applied physics (15.05.2010)
Published in Journal of applied physics (15.05.2010)
Get full text
Journal Article
Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
Stoklas, R, Gregušová, D, Hušeková, K, Marek, J, Kordoš, P
Published in Semiconductor science and technology (01.04.2014)
Published in Semiconductor science and technology (01.04.2014)
Get full text
Journal Article
Technology and application of in-situ AlOx layers on III-V semiconductors
Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, M., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I., Dobročka, E., Gregušová, D.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
Get full text
Journal Article
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.
Published in Applied surface science (15.02.2017)
Published in Applied surface science (15.02.2017)
Get full text
Journal Article
Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J.
Published in Journal of applied physics (28.04.2014)
Published in Journal of applied physics (28.04.2014)
Get full text
Journal Article
Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Blaho, M, Gregušová, D, Haš ík, Š, Seifertová, A, apajna, M, Šoltýs, J, Šatka, A, Nagy, L, Chvála, A, Marek, J, Carlin, J-F, Grandjean, N, Konstantinidis, G, Kuzmík, J
Published in Semiconductor science and technology (01.06.2016)
Published in Semiconductor science and technology (01.06.2016)
Get full text
Journal Article
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P
Published in Semiconductor science and technology (01.08.2007)
Published in Semiconductor science and technology (01.08.2007)
Get full text
Journal Article