Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St, Moers, J., Mayer, J., Hardtdegen, H.
Published in Applied physics letters (25.01.2021)
Published in Applied physics letters (25.01.2021)
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Journal Article
Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H
Published in Semiconductor science and technology (01.09.2021)
Published in Semiconductor science and technology (01.09.2021)
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Journal Article
Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction
Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T
Published in Semiconductor science and technology (24.03.2017)
Published in Semiconductor science and technology (24.03.2017)
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Journal Article
Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures
Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.
Published in Materials science in semiconductor processing (01.03.2019)
Published in Materials science in semiconductor processing (01.03.2019)
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Journal Article
Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
Stoklas, R, Gregušová, D, Hušeková, K, Marek, J, Kordoš, P
Published in Semiconductor science and technology (01.04.2014)
Published in Semiconductor science and technology (01.04.2014)
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Journal Article
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P
Published in Semiconductor science and technology (01.08.2007)
Published in Semiconductor science and technology (01.08.2007)
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Journal Article
The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors
Kordoš, P, Kúdela, P, Gregušová, D, Donoval, D
Published in Semiconductor science and technology (01.12.2006)
Published in Semiconductor science and technology (01.12.2006)
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Journal Article
InN/InAlN heterostructures for new generation of fast electronics
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Published in Journal of applied physics (28.06.2024)
Published in Journal of applied physics (28.06.2024)
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Journal Article
InN: Breaking the limits of solid-state electronics
Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.
Published in AIP advances (01.12.2021)
Published in AIP advances (01.12.2021)
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Journal Article
Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates
Eliáš, P, Gregušová, D, Martaus, J, Kostič, I
Published in Journal of micromechanics and microengineering (01.02.2006)
Published in Journal of micromechanics and microengineering (01.02.2006)
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Journal Article
Large-scale high-resolution scanning Hall probe microscope used for MgB2 filament characterization
Cambel, V, Fedor, J, Gregušová, D, Kováč, P, Hušek, I
Published in Superconductor science & technology (01.04.2005)
Published in Superconductor science & technology (01.04.2005)
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Journal Article
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.
Published in Applied surface science (31.12.2017)
Published in Applied surface science (31.12.2017)
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Journal Article
Growth and performance of n++ GaN cap layer for HEMTs applications
Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., Konstantinidis, G.
Published in Materials science in semiconductor processing (01.01.2025)
Published in Materials science in semiconductor processing (01.01.2025)
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Journal Article
Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs
Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.
Published in Applied surface science (30.10.2020)
Published in Applied surface science (30.10.2020)
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Journal Article
Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Technology and application of in-situ AlOx layers on III-V semiconductors
Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, M., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I., Dobročka, E., Gregušová, D.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.
Published in Applied surface science (15.02.2017)
Published in Applied surface science (15.02.2017)
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